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GNOD

GNOD

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    GNOD - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
GNOD 数据手册
GNOA - GNOM PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 2.0 ± 0.2 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL GNOA GNOB GNOD GNOE GNOG GNOH GNOJ GNOK GNOM UNIT VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ TJ TSTG 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.5 50 1.1 5.0 50 30 500 350 500 600 420 600 800 560 800 1000 700 1000 V V V A A V µA µA pF °C °C Typical Junction Capacitance (Note1) - 65 to + 150 - 65 to + 150 Note : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC Page 1 of 2 Rev. 01 : January 10, 2004 RATING AND CHARACTERISTIC CURVES ( GNOA - GNOM ) PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 Ta = 25 °C 40 1.2 0.9 30 0.6 20 0.3 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 FORWARD CURRENT, AMPERES Ta = 100 °C 1.0 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : January 10, 2004
GNOD
1. 物料型号: - 型号为GNOA至GNOM,这些型号可能代表不同的电压等级。

2. 器件简介: - 器件为玻璃钝化芯片,具有高电流能力、高可靠性、低反向电流和低正向电压降的特点。

3. 引脚分配: - 文档中提到引脚为表面贴装型,极性由色带表示阴极端,安装位置为任意。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50至1000伏特不等。 - 最大RMS电压(VRMS):35至700伏特不等。 - 最大直流阻断电压(Voc):50至1000伏特不等。 - 最大平均正向电流(IF(AV)):1.5安培。 - 峰值正向浪涌电流(IFSM):50安培。 - 最大正向电压(VF):1.1伏特。 - 最大直流反向电流(IR):5.0毫安。 - 典型结电容(CJ):30皮法。

5. 功能详解: - 器件为表面贴装型硅整流二极管,具有玻璃钝化结构,适用于高电流和高可靠性的应用场合。

6. 应用信息: - 适用于需要高电流和高可靠性的整流应用。

7. 封装信息: - 封装为SMA塑封,环氧树脂为UL94V-0级阻燃,重量为0.067克。

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