LL4148

LL4148 FEATURES : * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free HIGH SPEED SWITCHING DIODE MiniMELF (SOD-80C) Cathode Mark φ 0.063 (1.64) 0.055 (1.40) 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. 0.079 (2.00)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified .) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Current (1) Symbol VRM VR IF IF(AV) IFSM PD RӨJtp TJ TS Value 100 75 200 150 500 500 300 175 -65 to + 175 Unit V V mA mA mA mW °C/W °C °C Maximum Average Forward Current Half Wave Rectification with Resistive Load, f ≥ 50Hz (1) Maximum Surge Forward Current at t < 1s and Tj = 25°C Maximum Power Dissipation (1) Thermal Resistance Junction to tie-point Maximum Junction Temperature Storage Temperature Range Note: (1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Parameter Reverse Current Forward Voltage Diode Capacitance Reverse Recovery Time (TJ = 25°C unless otherwise noted) Symbol IR VF Cd Trr Test Condition VR = 20 V VR = 75 V VR = 20 V , Tj = 150 °C IF = 10 mA f = 1MHz ; VR = 0 IF = 10 mA , I R = 1mA, VR = 6 V, RL = 100Ω Min. - Typ. - Max. 25 5 50 1 4 4 Unit nA μA μA V pF ns Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( LL4148 ) FIG. 1 ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 800 1000 FIG. 2 TYPICAL FORWARD VOLTAGE POWER DISSIPATION , P D (mW) 600 Forward Current , IF (mA) 100 10 400 1 TJ = 25°C 200 0.1 0 0 100 200 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 104 1.0 Diode Capacitance , Cd (pF) Reverse Current , IR (nA) 103 0.9 0.8 102 0.7 0.6 0.5 0.4 0 5 10 f = 1MHz; TJ = 25°C 10 1 0 100 200 Reverse Voltage , VR (V) Junction Temperature, Tj (°C) Page 2 of 2 Rev. 02 : March 25, 2005