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LL4448

LL4448

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    LL4448 - HIGH SPEED SWITCHING DIODE - SynSemi, Inc.

  • 数据手册
  • 价格&库存
LL4448 数据手册
LL4448 FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 75V • Peak reverse voltage:max. 100 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE MiniMELF (SOD-80C) Cathode Mark φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. 0.079 (2.00)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current (1) Half Wave Rectification with Resistive Load , f ≥ 50 Hz Maximum Surge Forward Current at t < 1s , Tj = 25°C Maximum Power Dissipation (1) (1) 25 °C ambient temperature unless otherwise specified.) Symbol VRM VR IF IF(AV) IFSM PD RθJA TJ TS Value 100 75 200 150 0.5 500 350 175 -65 to + 175 Unit V V mA mA A mW °C/W °C °C Thermal Resistance Junction to Ambient Air Maximum Junction Temperature Storage Temperature Range Note : (1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Diode Capacitance Reverse Recovery Time Symbol IR VF Cd Trr Test Condition V R = 20 V V R = 75 V VR = 20 V , Tj = 150 °C IF = 100 mA f = 1MHz ; VR = 0 IF = 10 mA to IR = 1mA VR = 6V , RL = 100 Ω Min. - Typ. - Max. 25 5 50 1.0 4.0 4.0 Unit nA µA µA V pF ns Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( LL4448 ) FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 200 1000 AVERAGE FORWARD OUTPUT CURRENT, mA 150 Forward Current , IF (mA) 100 10 TJ = 25°C 1 100 50 0.1 0 0 100 200 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 104 1.0 Diode Capacitance , Cd (pF) Reverse Current , IR (nA) 10 3 0.9 0.8 102 VR = 20V 0.7 f = 1MHz; 0.6 TJ = 25°C 10 0.5 0.4 0 10 20 1 0 100 200 Reverse Voltage , VR (V) Junction Temperature, Tj (°C) Page 2 of 2 Rev. 02 : March 25, 2005
LL4448 价格&库存

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