RBV2510

RBV2500 - RBV2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * W eight : 8.17 grams ( Approximaly ) 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 12.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : SYMBOL VRRM VRMS VDC IF(AV) IFSM I2 t VF IR IR(H) RθJC TJ TSTG RBV 2500 50 35 50 RBV 2501 100 70 100 RBV 2502 200 140 200 RBV 2504 400 280 400 25 300 375 1.1 10 200 1.45 RBV 2506 600 420 600 RBV 2508 800 560 800 17.5 ± 0.5 RBV 2510 1000 700 1000 UNIT V V V A A A 2S V µA µA °C/W °C °C - 40 to + 150 - 40 to + 150 1. Thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate Page 1 of 2 Rev. 03 : September 9, 2005 RATING AND CHARACTERISTIC CURVES ( RBV2500 - RBV2510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 25 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 250 20 200 TJ = 50 °C 15 150 10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate 100 5 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 10 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 REVERSE CURRENT, MICROAMPERES 1.0 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.0 0 20 40 60 80 100 12 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005