RBV801

RBV800 - RBV810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * W eight : 7.97 grams ( Approximaly ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 4.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL RBV 800 50 35 50 RBV 801 100 70 100 RBV 802 200 140 200 RBV 804 400 280 400 8.0 RBV 806 600 420 600 RBV 808 800 560 800 17.5 ± 0.5 RBV 810 1000 700 1000 UNIT V V V A A A 2S V µA µA °C/W °C °C VRRM VRMS VDC IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 300 160 1.0 10 200 2.5 - 40 to + 150 - 40 to + 150 Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink. Page 1 of 2 Rev. 03 : September 9, 2005 RATING AND CHARACTERISTIC CURVES ( RBV800 - RBV810 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 12 HEAT-SINK MOUNTING, 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.PLATE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 10 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 250 8 200 TJ = 50 °C 6 Tc = 50°C 4 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 2 50 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 °C TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 12 0 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005