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SFT7

SFT7

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    SFT7 - SUPER FAST RECTIFIER DIODES - SynSemi, Inc.

  • 数据手册
  • 价格&库存
SFT7 数据手册
SFT1 - SFT9 PRV : 50 - 1000 Volts Io : 2.5 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time Pb / RoHS Free SUPER FAST RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * W eight : 0.645 gram 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Maximum Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 2.5 A. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL SFT1 SFT2 SFT3 SFT4 SFT5 SFT6 SFT7 SFT8 SFT9 UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 2.5 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF IR IR(H) Trr 100 0.95 5.0 50 35 50 - 65 to + 150 - 65 to + 150 1.7 4.0 A V µA µA ns pf °C °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range CJ TJ TSTG Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( SFT1 - SFT9 ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 A D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 A Trr + - 1.0 A SET TIME BASE FOR 15 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2.5 125 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 100 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 2.0 1.5 75 1.0 50 0.5 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 25 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 SFT1 - SFT4 SFT5 - SFT7 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 SFT8 - SFT9 1.0 1.0 Pulse Width = 300 µ s 2% Duty Cycle TJ = 25 °C 0.1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 04+CF35 : March 25, 2005

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