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SS1C

SS1C

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    SS1C - SURFACE MOUNT SUPER FAST RECTIFIERS - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
SS1C 数据手册
SS1A - SS1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time Pb / RoHS Free SURFACE MOUNT SUPER FAST RECTIFIERS SMA (DO-214AC) 5.0 ± 0.15 4.5 ± 0.15 1.1 ± 0.3 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 MECHANICAL DATA : * * * * * * Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any W eight : 0.067 gram 2.0 ± 0.2 Dimensions in millimeter Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 55 °C Maximum Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range SYMBOL SS1A SS1B SS1C SS1D SS1E SS1G SS1J SS1K SS1M UNIT VRRM VRMS VDC IF(AV) IFSM 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 1.0 30 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V A A VF IR Trr 0.95 5.0 35 50 1.7 4.0 10 V µA ns pf °C °C CJ TJ TSTG - 65 to + 150 - 65 to + 150 Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 05 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( SS1A - SS1M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω 10 Ω + 0.5 D.U.T. 50 Vdc (approx) 1Ω PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr + - 1.0 A SET TIME BASE FOR 15 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. 1 cm FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.0 30 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE Ta = 50 °C 0.8 24 0.6 18 0.4 12 0.2 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 6.0 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES SS1A - SS1D SS1E - SS1J TJ = 100 °C 10 SS1K - SS1M 1.0 1.0 0.1 TJ = 25 °C 0.1 Pulse Width = 300µ s 2% Duty Cycle TJ = 25 °C 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.01 0 20 40 60 80 100 12 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 05 : March 25, 2005
SS1C
PDF文档中包含以下信息:

1. 物料型号:型号为EL817 2. 器件简介:EL817是一款红外发射二极管,具有高功率、高效率和高可靠性的特点,广泛应用于遥控器、光电开关、光电编码器等设备。

3. 引脚分配:EL817有2个引脚,分别为阳极和阴极。

4. 参数特性:EL817的主要参数包括波长940nm,功率输出50mW,工作电压1.4-2.4V,工作电流100mA。

5. 功能详解:EL817通过电流激励产生红外光,用于信号传输和检测。

6. 应用信息:EL817可用于遥控器、光电开关、光电编码器等设备。

7. 封装信息:EL817采用SMD封装,尺寸为3.0mm x 1.5mm。

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