找到“specification”相关的规格书共2,748个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| AA60A-036L-050D033HN-8 | ASTEC[AstecAmerica,Inc] | AA60A-036L-050D033HN-8 - This specification covers the requirement for a wide input voltage range (18V to 60V) half brick - baseplate design, - Astec America, Inc | 获取价格 | ||
| K4H1G0438M-UCB3 | SAMSUNG[Samsungsemiconductor] | K4H1G0438M-UCB3 - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) - Samsung semiconductor | 获取价格 | ||
| K4H1G0438M-UC3 | SAMSUNG[Samsungsemiconductor] | K4H1G0438M-UC3 - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) - Samsung semiconductor | 获取价格 | ||
| BR25H080-W | ROHM[Rohm] | BR25H080-W - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| BR25H020FJ-WE2 | ROHM[Rohm] | BR25H020FJ-WE2 - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| AA60A-036L-050D033H-6M3 | ASTEC[AstecAmerica,Inc] | AA60A-036L-050D033H-6M3 - This specification covers the requirement for a wide input voltage range (18V to 60V) half brick - baseplate design, - Astec America, Inc | 获取价格 | ||
| AA60A-036L-050D033H | ASTEC[AstecAmerica,Inc] | AA60A-036L-050D033H - This specification covers the requirement for a wide input voltage range (18V to 60V) half brick - baseplate design, - Astec America, Inc | 获取价格 | ||
| K4H1G0438M-ULB3 | SAMSUNG[Samsungsemiconductor] | K4H1G0438M-ULB3 - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) - Samsung semiconductor | 获取价格 | ||
| K4H1G0438M-UC2 | SAMSUNG[Samsungsemiconductor] | K4H1G0438M-UC2 - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) - Samsung semiconductor | 获取价格 | ||
| K4H1G0438M-LB3 | SAMSUNG[Samsungsemiconductor] | K4H1G0438M-LB3 - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) - Samsung semiconductor | 获取价格 | ||
| BR25H320F-WE2 | ROHM[Rohm] | BR25H320F-WE2 - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| BR25H080FJ-WE2 | ROHM[Rohm] | BR25H080FJ-WE2 - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| BR25H080FJ-W | ROHM[Rohm] | BR25H080FJ-W - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| BR25H080-WE2 | ROHM[Rohm] | BR25H080-WE2 - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| BR25H020-W | ROHM[Rohm] | BR25H020-W - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| CRO1877A-LF | ZCOMM[Z-Communications,Inc] | CRO1877A-LF - The following details the preliminary specification for a Voltage Controlled Oscillator centered at 1877.5 MHz with 85 MHz nominal tuning range. - Z-Communications, Inc | 获取价格 | ||
| M366S1724CT0-C1L | SAMSUNG[Samsungsemiconductor] | M366S1724CT0-C1L - PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base) - Samsung semiconductor | 获取价格 | ||
| K4H1G0838M-ULB3 | SAMSUNG[Samsungsemiconductor] | K4H1G0838M-ULB3 - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) - Samsung semiconductor | 获取价格 | ||
| BR25H020F-W | ROHM[Rohm] | BR25H020F-W - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 | ||
| BR25H010FJ-W | ROHM[Rohm] | BR25H010FJ-W - HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40°C ~ 125°C type - Rohm | 获取价格 |
