TBN6301E

Preliminary Specification NPN SILICON RF TRANSISTOR SOT323 TBN6301 series Unit in mm 2.1±0.1 1.25±0.05 □ Applications - UHF and VHF wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration (TBN6301U) 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 75 150 150 -65 ~ 150 Unit V V V mA mW ℃ ℃ Caution : Electro Static Discharge sensitive device http://www.tachyonics.co.kr Dec. 2005. 0~0.1 Page 1 of 6 Rev. 1.0 0.15±0.05 Preliminary Specification □ Electrical Characteristics (TA = 25 ℃) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 15 V, IE = 0 mA VCE = 8 V, IB = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA VCE = 5 V, IC = 20 mA Insertion Power Gain |S21|2 VCE = 3 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 20 mA, f = 1 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 3 V, IC = 10 mA, f = 1 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz 50 5 6 7 7 TBN6301 series Min. Typ. Max. 0.5 10 0.5 250 Unit ㎂ ㎂ ㎂ 6 7.5 9 9.5 1.4 1.1 1.8 GHz GHz dB dB pF □ hFE Classification Marking hFE Value SB2 50 - 160 SB1 125 - 250 □ Available Package Product TBN6301S TBN6301U TBN6301E TBN6301KF Package SOT23 SOT323 SOT523 SOT623F Unit in mm Dimension 2.9 ⅹ 1.3, 1.2t 2.0 ⅹ 1.25, 1.0t 1.6 ⅹ 0.8, 0.8t 1.4 ⅹ 0.8, 0.6t http://www.tachyonics.co.kr Dec. 2005. Page 2 of 6 Rev. 1.0 Preliminary Specification TBN6301 series □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Power Dissipation vs. Ambient Temperature 200 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance, Cre (pF) 1.4 f = 1 MHz Collector Power Dissipation, PC (mW) 150 1.2 100 1.0 50 0 0 25 50 75 100 o 125 150 0.8 0 1 2 3 4 5 6 7 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 400 350 300 VCE = 3 V 30 25 20 15 10 5 Collector Current vs. Base to Emitter Voltage VCE = 3 V 250 200 150 100 50 0 0.1 Collector Current, IC (mA) 1 10 100 DC Current Gain, hFE 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) http://www.tachyonics.co.kr Dec. 2005. Page 3 of 6 Rev. 1.0 Preliminary Specification TBN6301 series Base Current, Collector Current vs. Base to Emitter Voltage Base Current, IB or Collector Current, IC (A) 10 10 10 10 10 10 10 10 10 0 Collector Current vs. Collector to Emitter Voltage 70 IB Step = 50 µA -1 -2 Collector Current, IC (mA) VCE = 3 V 60 50 40 30 20 10 -3 -4 -5 -6 -7 -8 10 -9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0 1 2 3 4 5 6 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) Gain Bandwidth Product vs. Collector Current 14 30 Insertion Power Gain vs. Frequency VCE = 3 V IC = 10 mA Gain Bandwidth Product, fT (GHz) 12 10 8 6 4 2 0 1 Insertion Power Gain, |S21| (dB) VCE = 3 V VCE = 5 V VCE = 7 V 25 20 15 10 5 0 0.1 2 10 100 1 Collector Current, IC (mA) Frequency (GHz) http://www.tachyonics.co.kr March. 2005. Page 4 of 6 Rev. 1.0 Preliminary Specification TBN6301 series Insertion Power Gain vs. Collector Current 16 20 Maximum Available Gain vs. Collector Current Maximum Available Gain, MAG (dB) VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz Insertion Power Gain, |S21| (dB) 14 12 10 8 6 4 2 0 1 VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz 2 15 10 5 0 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) http://www.tachyonics.co.kr March. 2005. Page 5 of 6 Rev. 1.0 Preliminary Specification □ Dimensions of TBN6301S in mm SOT 23 TBN6301 series □ Dimensions of TBN6301E in mm SOT523 □ Dimensions of TBN6301KF in mm SOT 623F 1.2 0.8 Pin Configuration (SOT23, SOT523, SOT623F) Pin No. 1 2 Symbol B E C Description Base Emitter Collector 1 1.4 0.9 3 0.2 2 3 0.6 0~0.1 0.11 http://www.tachyonics.co.kr March. 2005. Page 6 of 6 Rev. 1.0