2N4400

Small Signal General Purpose Transistors (NPN) 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram TO-92 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Marking Code Description 2N4400 2N4400 40 60 6.0 600 625 5.0 1.5 12 200 83.3 -55 to +150 2N4401 2N4401 V V V mA mW mW/° C W mW/° C ° C/W ° C/W °C Unit Conditions VCEO VCBO VEBO IC PD PD RθJA RθJC TJ ,TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at TA=25°C Derate above 25°C Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Operation and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-03-05 Page 1 of 4 Small Signal General Purpose Transistors (NPN) 2N4400/2N4401 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) 2N4400 Symbol Description Min. Max. 0.40 0.75 0.95 1.20 100 100 150 7.5 8.0 6.5 30 250 30 15 20 225 30 Min. 60 40 6.0 0.75 20 40 80 100 40 1.0 0.1 250 40 1.0 Max. 0.40 0.75 0.95 1.20 100 100 300 15 8.0 6.5 30 500 30 15 20 225 30 μS nS nS nS nS kΩ x10‫־‬ 4 2N4401 Unit Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VEB=0.4V, VCE=35V VEB=0.4V, VCE=35V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0 f=100KHz, VEB=0.5V, IC=0 f=100KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCC=30V, VEB=2V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA V(BR)CBO V(BR)CEO* V(BR)EBO VCE(sat) * VBE(sat) * ICEV IBEV Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Emitter Saturation Voltage 60 40 6.0 0.75 20 V V V V Base Emitter Saturation Voltage Collector Cut–Off Current Base Cut–Off Current V nA nA hFE* D.C. Current Gain 40 50 20 hie hre fT CCBO CEBO hfe hoe td tr ts tf *Pulse Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance Delay Time Rise Time Storage Time Fall Time 0.5 0.1 200 20 1.0 - MHz pF pF Test: Pulse Width