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2SB817E

2SB817E

  • 厂商:

    TAITRON

  • 封装:

  • 描述:

    2SB817E - Power Transistor (PNP) - TAITRON Components Incorporated

  • 数据手册
  • 价格&库存
2SB817E 数据手册
Power Transistor (PNP) 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application Mechanical Data Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram TO-3P Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions VCBO VCEO VEBO IC ICM Ptot Power Dissipation Derate above 25°C RθJC TJ, TSTG Thermal Resistance from Junction to Case Operating and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-04-16 Page 1 of 3 Power Transistor (PNP) 2SB817E Electrical Characteristics (T Ambient=25ºC unless noted otherwise) 2SB817E Symbol Description Min. 100 Max. 200 2.5 1.5 100 100 0.3 7.0 0.7 V V V V V μA μA μS μS μS Unit Conditions VCE=5.0V, IC=1.0A VCE=5.0V, IC=6.0A IC=5.0mA, IE=0 IC=5.0mA, IB=0 IB=5.0mA, IC=0 IC=5.0A, IB=0.5A IC=1.0A, VCE=5.0V VCB=80V, IE=0 VEB=4.0V, IC=0 *hFE V(BR)CBO V(BR)CEO V(BR)EBO *VCE(sat) *VBE(on) ICBO IEBO ton ts tf D.C. Current Gain 20 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Base Cut-off Current Emitter-Base Cut-off Current Turn-on Time Storage Time Fall Time 160 140 6.0 - VCC=20V, IC=1.0A IB1=-IB2=100mA PW=20μS *Pulse Test: Pulse Width= 300µs, Duty Cycle ≤2.0% Rev. A/AH 2008-04-16 www.taitroncomponents.com Page 2 of 3 Power Transistor (PNP) 2SB817E Dimensions in mm TO-3P How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-04-16 www.taitroncomponents.com Page 3 of 3
2SB817E 价格&库存

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