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MMBD7000

MMBD7000

  • 厂商:

    TAITRON

  • 封装:

  • 描述:

    MMBD7000 - Dual Small Signal Switching Diode - TAITRON Components Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBD7000 数据手册
Dual Small Signal Switching Diode MMBD7000 Dual Small Signal Switching Diode Features • • • • • Silicon Epitaxial Planar Diode Fast Switching Dual Diode. Especially Suited for Automatic Insertion High Conductance Electrically Identical to Standard JEDEC RoHS Compliant SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Case Solderable per MIL-STD-202G, Method 208 Approx. 0.0088 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Marking Code Description MMBD7000 T3 100 100 200 500 225 1.8 300 2.4 417 556 150 -55 to +150 V V mA mA mW mW/° C mW mW/° C ° C/W ° C/W °C °C TA=25° C Derate above 25° C TA=25° C Derate above 25° C Note1 Note2 Unit Conditions VRM VRRM IF(AV) IFSM Reverse Voltage Peak Reverse Voltage Forward Average Current Peak Forward Surge Current, Pulse Width=1s Power Dissipation on FR-5 Board PD Total Device Dissipation on Alumina Substrate RthJA RthJA TJ TS Typical Thermal Resistance Junction to Ambient Air Maximum Junction Temperature Storage Temperature Range Note: 1) Device on alumina substrate 2) On FR-5 board TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2007-11-17 Page 1 of 3 Dual Small Signal Switching Diode MMBD7000 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Reverse Breakdown Voltage Min. 100 Max. 1.0 3.0 100 0.70 0.82 1.10 1.5 4.0 pF nS V µA Unit V Conditions VBR IR IR=100µA VR=50V VR=100V VR=50V, Tj=125° C Leakage Current 0.55 VF CD Trr Forward Voltage 0.67 0.75 IF=1mA IF=10mA IF=100mA VR=0V, f=1MHz IF=10mA , IR=10mA, Irr=1mA , RL=100Ω Diode Capacitance Reverse Recovery Time - Dimensions in inch (mm) SOT-23 Rev. A/AH 2007-11-17 www.taitroncomponents.com Page 2 of 3 Dual Small Signal Switching Diode MMBD7000 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2007-11-17 www.taitroncomponents.com Page 3 of 3
MMBD7000
1. 物料型号: - 型号为MMBD7000。

2. 器件简介: - MMBD7000是一款双小信号开关二极管,采用硅外延平面二极管技术,快速开关双二极管,特别适合自动插入安装,具有高导通性,并且电气特性与标准JEDEC相同,符合RoHS标准。

3. 引脚分配: - 封装为SOT-23塑料封装,引脚可焊性符合MIL-STD-202G方法208。

4. 参数特性: - 反向电压(VRM):100V - 峰值反向电压(VRRM):100V - 前向平均电流(IF(AV)):200mA - 峰值前向浪涌电流(IFSM),脉宽=1s:500mA - 功率耗散(PD):225mW,在25°C时 - 功率耗散在FR-5板上:1.8mW/°C,需在25°C以上降额 - 最大结温(TJ):150°C - 存储温度范围(Ts):-55至+150°C

5. 功能详解: - 该二极管具有反向击穿电压和漏电流特性,具体为反向击穿电压(VBR)在100V时,漏电流(IR)在50V下不超过1.0μA。

6. 应用信息: - 适用于需要双小信号开关二极管的场合,特别是在需要快速开关和高导通性的应用中。

7. 封装信息: - 封装类型为SOT-23,具体尺寸以英寸(mm)给出,详见PDF文档中的图示。
MMBD7000 价格&库存

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