SMD General Purpose Transistor (NPN) MMBT2222A
SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance
Mechanical Data
Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram
SOT-23
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol Marking Code Description MMBT2222A 1P 75 40 6.0 0.6 350 Power Dissipation above 25°C (note 1) 2.8 mW/° C ° C /W °C °C V V V A mW Unit
VCBO VCEO VEBO IC Ptot RθJA TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range
357 150 -55 to +150
Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415
Rev. A/AH 2007-11-13 Page 1 of 3
SMD General Purpose Transistor (NPN) MMBT2222A
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol Description Min. 35 50 75 Max. 300 0.3 1.0 1.2 2.0 10 10 V V V V Unit Conditions
VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA Ta=-55° C VCE=10V, IC=150mA* VCE=10V, IC=500mA* VCE=1.0V, IC=150mA* IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VEB=3V, VCE=60V VCB=60V, IE=0 VCB=60V, IE=0, Ta=125° C VEB=3V, VCE=60V VEB=3V, IC=0 VCE=20V, IC=20mA, f=100MHz VCB=10V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 VCE=10V, IC=100µA, Rs=1kΩ, f=1kHz VCB=20V, IC=20mA, f=31.8 MHz IB1=15mA IC=150mA VCC=30V VEB=0.5V IB1=IB2=15mA IC=150mA VCC=30V
hFE
D.C. Current Gain
35 100 40 50
V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEX ICBO IBL IEBO fT Cobo Cibo
NF
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* Collector Cut-off Current Collector Cut-off Current Base Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product Output Capacitance Input Capacitance Noise Figure Collector Base Time Constant Delay Time Rise Time Storage Time Fall Time
75 40 6.0 0.6 300 -
V nA nA µA nA nA MHz pF pF dB ps
10 20 10 8.0 25 4.0 150 10 25 225 60
rb’Cc td tr ts tf
ns
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%
Rev. A/AH 2007-11-13 www.taitroncomponents.com Page 2 of 3
SMD General Purpose Transistor (NPN) MMBT2222A
Dimensions in mm
SOT-23
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931
Rev. A/AH 2007-11-13 www.taitroncomponents.com Page 3 of 3
