MMBT3906

SMD General Purpose Transistor (PNP) MMBT3906 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Marking Code Description MMBT3906 2A 40 40 5.0 200 250 450 150 -55 to +150 V V V mA mW ° C /W °C °C Unit -VCBO -VCEO -VEBO -IC Ptot RθJA TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation above 25°C Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-05-06 Page 1 of 4 SMD General Purpose Transistor (PNP) MMBT3906 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT3906 Min. 60 80 Max. 300 V 0.25 0.4 0.85 0.95 50 50 4.5 10 4.0 400 35 35 225 75 nS V V V Unit Conditions -VCE=1V, -IC=0.1mA -VCE=1V, -IC=1mA -VCE=1V, -IC=10mA -VCE=1V, -IC=50mA -VCE=1V, -IC=100mA -IC=10µA, IE=0 -IC=1mA, IB=0 -IE=10µA, IC=0 -IC=10mA, -IB=1mA -IC=50mA, -IB=5mA -IC=10mA, -IB=1mA -IC=50mA, -IB=5mA -VEB=3V, -VCE=30V -VEB=3V, -VCE=30V -VCE=20V, -IC=10mA, f=100MHz -VCB=5V, IE=0, f=100KHz -VEB=0.5V, IC=0 f=100KHz -VCE=5V, -IC=100µA, RG=1KΩ, f=10Hz to 15.7kHz -VCE=10V, -IC=1mA f=1KHz hFE* D.C. Current Gain 100 60 30 -V(BR)CBO Collector-Base Breakdown Voltage 40 40 5.0 0.65 250 100 - -V(BR)CEO* Collector-Emitter Breakdown Voltage -V(BR)EBO* Emitter-Base Breakdown Voltage -VCE(sat)* -VBE(sat)* -ICEV -IEBV fT CCBO CEBO NF hfe td tr ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Cut-off Current Emitter-Base Cut-off Current Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Small Signal Current Gain Delay Time (see Fig 1) Rise Time (see Fig 1) Storage Time (see Fig 2) Fall Time (see Fig 2) V nA nA MHz pF pF dB -IB1=1mA, -IC=10mA -IB1=1mA, -IC=10mA IB1=-IB2=1mA, -IC=10mA IB1=-IB2=1mA, -IC=10mA Note: *Pulse Test: Pulse Width≤ 300µs, Duty Cycle ≤2.0% Rev. A/AH 2008-05-06 www.taitroncomponents.com Page 2 of 4 SMD General Purpose Transistor (PNP) MMBT3906 Fig 1 Fig 2 Dimensions in mm SOT-23 Rev. A/AH 2008-05-06 www.taitroncomponents.com Page 3 of 4 SMD General Purpose Transistor (PNP) MMBT3906 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-05-06 www.taitroncomponents.com Page 4 of 4