MMBTA55

MMBTA55

  • 厂商:

    TAITRON

  • 封装:

  • 描述:

    MMBTA55 - SMD General Purpose Transistor (PNP) - TAITRON Components Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTA55 数据手册
SMD General Purpose Transistor (PNP) MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Marking Code Description MMBTA55 2H 60 60 4.0 500 250 560 150 -55 to +150 MMBTA56 2G 80 80 V V V mA mW ° C /W °C °C Unit -VCBO -VCEO -VEBO -IC Ptot RθJA TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation above 25°C Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-04-12 Page 1 of 3 SMD General Purpose Transistor (PNP) MMBTA55/MMBTA56 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) MMBTA55 Symbol Description Min. 100 Max. 0.25 1.2 0.1 0.1 Min. 100 100 80 4.0 Max. 0.25 1.2 0.1 0.1 V V V V μA μA MMBTA56 Unit Conditions -VCE=1V, -IC=10mA -VCE=1V, -IC=100mA -IC=1mA, IB=0 IE=100µA, -IC=0 -IC=100mA, -IB=10mA -IC=100mA, -VCE=1.0V -VCE=60V, IB=0 hFE -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) -ICEO -ICBO fT D.C. Current Gain 100 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Cut-off Current Collector-Base Cut-off Current 60 4.0 - -VCB=60V, IE=0 Current Gain-Bandwidth Product 50 - -VCB=80V, IE=0 50 MHz -VCE=1V, -IC=100mA, f=100MHz Rev. A/AH 2008-04-12 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (PNP) MMBTA55/MMBTA56 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-04-12 www.taitroncomponents.com Page 3 of 3
MMBTA55
物料型号: - 型号:MMBTA55/MMBTA56

器件简介: - 该器件为SMD通用目的晶体管(PNP型),适用于开关和放大器应用,符合RoHS合规性要求。

引脚分配: - SOT-23封装,引脚配置为:1=基极(BASE),2=发射极(EMITTER),3=集电极(COLLECTOR)。

参数特性: - 集电极-基极电压(VCBO):MMBTA55为60V,MMBTA56为80V。 - 集电极-发射极电压(VCEO):MMBTA55为60V,MMBTA56为80V。 - 发射极-基极电压(VEBO):MMBTA55为4.0V。 - 集电极电流(Ic):MMBTA55为500mA。 - 功率耗散(Ptot):MMBTA55为250mW。 - 热阻(Roja):560°C/W。 - 结温(TJ):150°C。 - 存储温度范围(TSTG):-55至+150°C。

功能详解: - 直流电流增益(hFE):MMBTA55在-VCE=1V,-Ic=10mA时为100,MMBTA56在-VCE=1V,-Ic=100mA时也为100。 - 集电极-发射极击穿电压(V(BR)CEO):MMBTA55为60V,MMBTA56为80V。 - 发射极-基极击穿电压(V(BR)EBO):MMBTA55为4.0V。 - 集电极-发射极饱和电压(VCE(sat)):MMBTA55和MMBTA56均为0.25V。 - 基极-发射极导通电压(VBE(on)):MMBTA55和MMBTA56均为1.2V。 - 集电极-发射极截止电流(ICEO):MMBTA55和MMBTA56均为0.1A。 - 集电极-基极截止电流(ICBO):MMBTA55和MMBTA6均为0.1uA。 - 电流增益-带宽积(fT):MMBTA55和MMBTA56均为50MHz。

应用信息: - 该器件适用于开关和放大器应用。

封装信息: - 封装类型:SOT-23,塑料封装。 - 重量:0.008克。 - 引脚可焊性:符合MIL-STD-202G, Method 208标准。
MMBTA55 价格&库存

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