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1N962B

1N962B

  • 厂商:

    TAK_CHEONG(德昌)

  • 封装:

  • 描述:

    1N962B - 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators - Tak Cheong Electronics (H...

  • 详情介绍
  • 数据手册
  • 价格&库存
1N962B 数据手册
TAK CHEONG Li censed b y ON Semico nd uctor , A tradem ark o f semico nd uctor Com ponents I ndustri es, LLC for Zener Tec hnolo gy and Pro ducts . 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings (Note 1) Rating Maximum Steady State Power Dissipation @TL≤75℃ , Lead Length = 3/8” D erate Above 75℃ Operating and Storage Temperature Range TJ, Tstg 4.0 -65 to +200 mW/℃ °C L 9x xB Symbol PD Value 500 Units mW Note 1: Some part number series have lower JEDEC registered ratings. Specification Features:        Zener Voltage Range = 6.8V to 100V ESD Rating of Class 3 (>6 KV) per Human Body Model DO-35 Package ( DO-204AH ) D ouble Slug Type Construction Metallurgical Bonded Construction R oHS Compliant Solder Hot Dip Tin (Sn) Lead Finish L 9xxB = Logo = 1N9xxB D evice Code Specification Features: Case Finish : D ouble slug type, hermetically sealed glass : All external surfaces are corrosion resistant and leads are readily solderable Cathode Anode Polarity : C athode indicated by polarity band M ounting: Any Number: DB-072 Apr. 2010 / D Page 1 1N957B through 1N969B Series ® ® TAK CHEONG ELECTRICAL CHARACTERIZATION (TA = 25°C unless otherwise noted) Z ener Voltage (Note 3.) Device (Note 2.) Device M arking M in 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B 1N966B 1N967B 1N968B 1N969B 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B 1N966B 1N967B 1N968B 1N969B 6.460 7.125 7.790 8.645 9.500 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 VZ (Volts) Nom 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 M ax 7.140 8.875 8.610 9.555 10.500 11.55 12.60 13.65 15.75 16.8 18.90 21.00 23.10 @IZT (mA) 18.5 16.5 15 14 12.5 11.5 10.5 9.5 8.5 7.8 7 6.2 5.6 Li censed b y ON Semico nd uctor , A tradem ark o f semico nd uctor Com ponents I ndustri es, LLC for Zener Tec hnolo gy and Pro ducts . Z ener Impedance (Note 4.) Z ZT @IZT (Ω) 4.5 5.5 6.5 7.5 8.5 9.5 11.5 13 16 17 21 25 29 Z ZK @IZK (Ω) 700 700 700 700 700 700 700 700 700 700 750 750 750 (mA) 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Leakage Current IR @VR = 1V (uA) 150 75 50 25 10 5 5 5 5 5 5 5 5 (Volts) 5.2 5.7 6.2 6.9 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 IZM (Note 5.) (mA) 47 42 38 35 32 28 26 24 21 19 17 15 14 VF Forward Voltage = 1.5V max @ IF = 200mA for all types 2. TOLERANCE AND VOLTAGE DESIGNATION The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 3. Z ENER VOLTAGE (V Z) MEASUREMENT The zener voltage (V Z) is tested under pulse condition. The measured V Z is guaranteed to be within specification with device junction in thermal equilibrium. 4. Z ENER IMPEDANCE (Z Z) DERIVATION ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz. 5. M AXIMUM ZENER CURRENT RAT INGS (IZM) Values shown are based on the JEDEC rating of 400mW where the actual zener voltage (V Z) is known at the operation point, the zener current may be increas ed and is limited by the derating curve. Number: DB-072 Apr. 2010 / D Page 2 ® TAK CHEONG Package Outline Case Outline Li censed b y ON Semico nd uctor , A tradem ark o f semico nd uctor Com ponents I ndustri es, LLC for Zener Tec hnolo gy and Pro ducts . DO- 35 DIM Min M illimeters Max Min Inches Max A B C D 0.46 0.56 0.018 0.022 3.05 5.08 0.120 0.200 25.40 38.10 1.000 1.500 1.52 2.29 0.060 0.090 Note: all dimensions are within JEDEC standard. Number: DB-072 Apr. 2010 / D Page 3 TAK CHEONG ® D ISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A
1N962B
1. 物料型号: - 型号系列:1N957B 至 1N969B。

2. 器件简介: - 500mW DO-35 玻璃密封齐纳二极管,最大额定稳态功率耗散为500mW,工作和存储温度范围为-65至+200°C。

3. 引脚分配: - 齐纳二极管具有双slug型结构,齐纳二极管的阴极通过极性带标识。

4. 参数特性: - 齐纳电压范围:6.8V至100V。 - ESD等级:按照人体模型,为3级(>6kV)。 - 封装:DO-35封装(DO-204AH)。 - 构造:冶金键合构造。 - 符合RoHS标准。 - 引脚完成:热浸锡(Sn)。

5. 功能详解应用信息: - 该系列二极管主要用于电压稳定,具有不同的齐纳电压等级,适用于多种电压稳定需求。 - 正向电压VF最大值为1.5V(在IF=200mA时)。

6. 封装信息: - 封装类型:DO-35。 - 尺寸:按照JEDEC标准,提供了详细的最小和最大尺寸(毫米和英寸)。
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