MBR10200CT

TAK CHEONG ® SEM ICON DU CTO R 10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier Specification Features: High Voltage Wide Range Selection, 100V, 150V & 200V High Switching Speed Device Low Forward Voltage Drop Low Power Loss and High Efficiency Guard Ring for Over-voltage Protection High Surge Capability RoHS Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C Wave Soldering or per MIL-STD-750, Method 2026. POLARITY CONFIGURATION L xxyy Line 2 Line 3 Line 4 1 2 3 TO-220AB DEVICE MARKING DIAGRAM L = Tak Cheong Logo xxyy = Monthly Date Code Line 2 = MBR Line 3 = 10xxxCT Line 4 = Polarity 1. Anode 2. Cathode 3. Anode MAXIMUM RATINGS (Per Leg, unless otherwise specified ) Symbol VRRM VRWM VR IF(AV) IFSM TSTG TJ Parameter Maximum Repetitive Reverse Voltage Working Peak Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current Per Leg Per Package Non-repetitive Peak Forward Surge Current 8.3mS Single Phase @ Rated Load Storage Temperature Range Operating Junction Temperature MBR10100CT 100 MBR10150CT 150 MBR10200CT 200 Units V 5 10 80 -65 to +150 +150 A A °C °C These ratings are limiting values above which the serviceability of the diode may be impaired. THERMAL CHARACTERISTIC Symbol RθJC RθJA Parameter Maximum Thermal Resistance, Junction-to-Case (per leg) Maximum Thermal Resistance, Junction-to-Ambient (per leg) Value 1.5 62.5 Units °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg) Symbol IR VF Parameter Reverse Current Forward Voltage Test Condition (Note 1) TA = 25°C unless otherwise noted MBR10100CT Min ----0.95 Max 100 0.85 --1.00 MBR10150CT Min --Max 100 0.92 --1.25 MBR10200CT Min --Max 100 1.00 V μA Units @ rated VR IF = 5 A IF = 10A Note/s: 1. Tested under pulse condition of 300μS. Number: DB-027 March 2010 Release, Revision F Page 1 MBR10100CT through MBR10200CT TAK CHEONG TYPICAL CHARACTERISTICS ® SEM ICON DU CTO R Figure 1. Forward Current Derating Curve (Per Diode) 10 1000.0 Figure 2. Junction Capacitance (Per Diode) f = 1MHz Average Forward Current [A] Ta = 25℃ Typical Junction Capacitance [pF] 8 6 MBR10100CT 100.0 MBR10150CT 4 2 MBR10200CT 0 0 25 50 75 100 125 150 10.0 0 5 10 15 20 25 30 35 40 Tc - Case Tem perature [ ℃ ] Reverse Voltage [V] Figure 3. MBR10100CTTypical Reverse Current (Per Diode) 10000.000 Figure 4. MBR10150CTTypical Reverse Current (Per Diode) 1000.000 IR - Reverse Curretn [uA] Ta= 150℃ Ta=125℃ IR - Reverse Current [uA]) 1000.000 100.000 Ta= 150℃ Ta=125℃ 100.000 10.000 10.000 Ta=75℃ 1.000 1.000 Ta=75℃ 0.100 0.100 Ta=25℃ 0.010 0 10 20 30 40 50 60 70 80 90 100 0.010 Ta=25℃ 0.001 0 15 30 45 60 75 90 105 120 135 150 VR - Reverse Voltage [V] Figure 5. MBR10200CTTypical Reverse Current (Per Diode) 1000.000 VR - Reverse Voltage [V] Figure 6. MBR10100CT Typical Forward Voltage (Per Diode) 10 IR - Reverse Current [uA]) 100.000 10.000 Ta= 150℃ Ta=125℃ IF - Forward Current [mA] 1 Ta=150℃ 1.000 Ta=75℃ 0.100 Ta=125℃ Ta=75 0.1 Ta=25℃ 0.010 Ta=25℃ 0.001 0 10 20 30 40 50 60 70 80 90 100 0.01 0 0.2 0.4 0.6 0.8 1 VR - Reverse Voltage [V] VF - Instantaneous Forward Voltage [V] Number: DB-027 March 2010 Release, Revision F Page 2 TAK CHEONG ® SEM ICON DU CTO R Figure 7. MBR10150CT Typical Forward Voltage (Per Diode) 10 Figure 8. MBR10200CT Typical Forward Voltage (Per Diode) 10 IF - Forward Current [mA] IF - Forward Current [mA ] 1 1 Ta=150℃ Ta=150℃ Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=125℃ 0.1 Ta=75℃ Ta=25℃ 0.01 0 0.2 0.4 0.6 0.8 1 0.01 0 0.2 0.4 0.6 0.8 1 VF - Instantaneous Forward Voltage [V] VF - Instantaneous Forward Voltage [V] TO220 PACKAGE OUTLINE DIM A A1 A2 b b2 c D e E H1 L L1 ØP Q MILLIMETERS MIN 3.60 1.20 2.03 0.40 1.20 0.36 14.22 2.34 9.70 5.84 12.70 2.70 3.50 2.54 MAX 4.80 1.40 2.90 1.00 1.78 0.60 16.50 2.74 10.60 6.85 14.70 3.30 4.00 3.40 MIN INCHES MAX 0.189 0.055 0.114 0.039 0.070 0.024 0.650 0.108 0.417 0.270 0.579 0.130 0.157 0.134 0.142 0.047 0.080 0.016 0.047 0.014 0.560 0.092 0.382 0.230 0.500 0.106 0.138 0.100 NOTE: Above package outline conforms to JEDEC TO-220AB. Number: DB-027 March 2010 Release, Revision F Page 3 TAK CHEONG ® D ISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A