TC1SS244M_08

TAK CHEONG ® S EM IC O N DU C TO R 300 mW DO-34 Hermetically Sealed Glass - High Voltage Switching Diodes Absolute Maximum Ratings Symbol VRRM TSTG TJ IF (AV) IFSM TA = 25°C unless otherwise noted Value 250 -65 to +150 +150 200 1.0 4.0 Units V °C °C mA A A AXIAL LEAD DO34 Parameter Maximum Repetitive Reverse Voltage Storage Temperature Range Operating Junction Temperature Average Rectified Forward Current Non-repetitive Peak Forward Current Pulse Width = 1.0 Second Pulse Width = 1.0 µsecond DEVICE MARKING DIAGRAM L : Logo Device Code : TC1SS244M These ratings are limiting values above which the serviceability of the diode may be impaired. Thermal Characteristics Symbol PD Parameter Power Dissipation Value 300 Units mW Specification Features: DO-34 Package (JEDEC) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band ELECTRICAL SYMBOL Cathode Anode Electrical Characteristics Symbol BV IR VF TRR Breakdown Voltage TA = 25°C unless otherwise noted Parameter Test Condition IR=100µA VR=220V IF=200mA IF=IR=30mA RL=100Ω IRR=3mA --50 nS Limits Min 250 ----Max --10 1.5 Volts µA Volts Unit Reverse Leakage Current Forward Voltage Reverse Recovery Time C Capacitance VR=0V, f=1MHZ --- 5.0 L 244 pF Number: DB-051 June 2008 / C Page 1 TC1SS244M TAK CHEONG Typical Characteristics 500 ® S EM IC O N DU C TO R PD - Power Dissipation [mW] 1.5 Total Capacitance [pF] 400 300 200 100 0 0 25 50 75 100 125 150 175 200 f = 1MHz Ta = 25℃ 1.0 0.5 0.0 0 5 10 15 20 25 30 Temperature [℃ ] VR - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature Figure 2. Total Capacitance 160 60 IR - Leakage Current [nA] BV - Reverse Voltage [V] Ta=25℃ 150 50 40 30 20 10 0 Ta=25℃ 140 130 120 110 1 10 100 IR - Reverse Current [uA] 10 VR - Reverse Voltage [V] 100 Figure 3. Reverse Voltage vs Reverse Current BV – 1.0uA to 100uA Figure 4. Reverse Current vs Reverse Voltage IR – 10V to 100V 1500 1400 Ta=25℃ 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0.001 1000 VF - Forward Voltage [mV] VF - Forward Voltage (mV) 800 Ta= -40℃ Ta=25℃ 400 Ta=65℃ Ta=125℃ 200 600 0.100 10.000 IF - Forw ard Current [m A] 1000.000 0 0.01 0.1 1 10 IF - Forw ard Current (m A) 100 Figure 5. Forward Voltage vs Forward Current VF – 0.001mA to 800mA Figure 6. Forward Voltage vs Ambient Temperature VF – 0.01mA to 100mA (-40 to +125 Deg C) Number: DB-051 June 2008 / C Page 2 TAK CHEONG Package Outline Package ® S EM IC O N DU C TO R Case Outline DO-34 DO-34 DIM Min Millimeters Max Min Inches Max A B C D 0.46 0.55 0.018 0.022 2.16 3.04 0.085 0.120 25.40 38.10 1.000 1.500 1.27 1.90 0.050 0.075 Notes: 1. 2. All dimensions are within JEDEC standard. DO34 polarity denoted by cathode band. Number: DB-051 June 2008 / C Page 3 TAK CHEONG ® D ISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A