TCBZX55B36

® TAK CHEONG S EM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted Value 500 -65 to +175 +175 Units mW °C °C L : Logo Device Code : TCBZX55Txxx T : VZ tolerance B or C DEVICE MARKING DIAGRAM AXIAL LEAD DO35 L 55T xxx These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Zener Voltage Range 2.0 to 75 Volts DO-35 Package (JEDEC) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band ELECTRICAL SYMBOL Cathode Anode Electrical Characteristics Device Type TCBZX55C 2V0 TCBZX55C 2V2 TCBZX55C 2V4 TCBZX55C 2V7 TCBZX55C 3V0 TCBZX55C 3V3 TCBZX55C 3V6 TCBZX55C 3V9 TCBZX55C 4V3 TCBZX55C 4V7 TCBZX55C 5V1 TCBZX55C 5V6 TCBZX55C 6V2 TCBZX55C 6V8 TCBZX55C 7V5 TCBZX55C 8V2 TCBZX55C 9V1 TCBZX55C 10 TCBZX55C 11 TCBZX55C 12 TCBZX55C 13 VZ @ IZT (Volts) Min Max 1.88 2.11 2.08 2.33 2.28 2.56 2.51 2.89 2.8 3.2 3.1 3.5 3.4 3.8 3.7 4.1 4.0 4.6 4.4 5.0 4.8 5.4 5.2 6.0 5.8 6.6 6.4 7.2 7.0 7.9 7.7 8.7 8.5 9.6 9.4 10.6 10.4 11.6 11.4 12.7 12.4 14.1 TA = 25°C unless otherwise noted ZZT @ IZT IZT (Ω) (mA) Max 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 100 100 85 85 85 85 85 85 75 60 35 25 10 8 7 7 10 15 20 20 26 IZK (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 ZZK @ IZK (Ω) Max 600 600 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 IR @ VR (μA) Max 100 100 50 10 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (Volts) 1 1 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 Number: DB-034 June 2008 / F Page 1 TCBZX55C2V0 through TCBZX55C75 TCBZX55B2V4 through TCBZX55B75 ® TAK CHEONG S EM IC O N DU C TO R TA = 25°C unless otherwise noted VZ @ IZT ZZT @ IZT IZT Device Type (Volts) (Ω) (mA) Max Min Max TCBZX55C 15 13.8 15.6 5 30 TCBZX55C 16 15.3 17.1 5 40 TCBZX55C 18 16.8 19.1 5 50 TCBZX55C 20 18.8 21.1 5 55 TCBZX55C 22 20.8 23.3 5 55 TCBZX55C 24 22.8 25.6 5 80 TCBZX55C 27 25.1 28.9 5 80 TCBZX55C 30 28 32 5 80 TCBZX55C 33 31 35 5 80 TCBZX55C 36 34 38 5 80 TCBZX55C 39 37 41 2.5 90 TCBZX55C 43 40 46 2.5 90 TCBZX55C 47 44 50 2.5 110 TCBZX55C 51 48 54 2.5 125 TCBZX55C 56 52 60 2.5 135 TCBZX55C 62 58 66 2.5 150 TCBZX55C 68 64 72 2.5 160 TCBZX55C 75 70 80 2.5 170 VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types VZ @ IZT (Volts) Min Max 2.35 2.45 2.65 2.75 2.94 3.06 3.23 3.37 3.53 3.67 3.82 3.98 4.21 4.39 4.61 4.79 5.00 5.20 5.49 5.71 6.08 6.32 6.66 6.94 7.33 7.63 8.04 8.36 8.92 9.28 9.80 10.20 10.78 11.22 11.76 12.24 12.74 13.26 14.70 15.30 15.68 16.32 17.64 18.36 19.60 20.40 21.56 22.44 23.52 24.48 26.46 27.54 29.40 30.60 32.34 33.66 35.28 36.72 38.22 39.78 42.14 43.86 46.06 47.94 IZT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 ZZT @ IZT (Ω) Max 85 85 85 85 85 85 75 60 35 25 10 8 7 7 10 15 20 20 26 30 40 50 55 55 80 80 80 80 80 90 90 110 Electrical Characteristics IZK (mA) 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ZZK @ IZK (Ω) Max 110 170 170 220 220 220 220 220 220 220 500 600 700 700 1000 1000 1000 1000 IR @ VR (μA) Max 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (Volts) 11 12 13 15 16 18 20 22 24 27 28 32 35 38 42 47 51 56 Device Type TCBZX55B 2V4 TCBZX55B 2V7 TCBZX55B 3V0 TCBZX55B 3V3 TCBZX55B 3V6 TCBZX55B 3V9 TCBZX55B 4V3 TCBZX55B 4V7 TCBZX55B 5V1 TCBZX55B 5V6 TCBZX55B 6V2 TCBZX55B 6V8 TCBZX55B 7V5 TCBZX55B 8V2 TCBZX55B 9V1 TCBZX55B 10 TCBZX55B 11 TCBZX55B 12 TCBZX55B 13 TCBZX55B 15 TCBZX55B 16 TCBZX55B 18 TCBZX55B 20 TCBZX55B 22 TCBZX55B 24 TCBZX55B 27 TCBZX55B 30 TCBZX55B 33 TCBZX55B 36 TCBZX55B 39 TCBZX55B 43 TCBZX55B 47 Number: DB-034 June 2008 / F IZK (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 ZZK @ IZK (Ω) Max 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 220 500 600 700 IR @ VR (μA) Max 50 10 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (Volts) 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 28 32 35 Page 2 ® TAK CHEONG S EM IC O N DU C TO R TA = 25°C unless otherwise noted VZ @ IZT ZZT @ IZT IZT Device Type (Volts) (Ω) (mA) Max Min Max TCBZX55B 51 49.98 52.02 2.5 125 TCBZX55B 56 54.88 57.12 2.5 135 TCBZX55B 62 60.76 63.24 2.5 150 TCBZX55B 68 66.64 69.36 2.5 160 TCBZX55B 75 73.50 76.50 2.5 170 VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types Electrical Characteristics IZK (mA) 0.5 0.5 0.5 0.5 0.5 ZZK @ IZK (Ω) Max 700 1000 1000 1000 1000 IR @ VR (μA) Max 0.1 0.1 0.1 0.1 0.1 VR (Volts) 38 42 47 51 56 Notes: 1. TOLERANCE AND VOLTAGE DESIGNATION The type numbers listed have zener voltage as shown. 2. SPECIALS AVAILABLE INCLUDE Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery, contact you nearest Tak Cheong representative. 3. ZENER VOLTAGE (VZ) MEASUREMENT The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA. 4. ZENER IMPEDANCE (ZZ) DERIVATION Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current (IZT) is superimposed to IZT . Number: DB-034 June 2008 / F Page 3 ® TAK CHEONG S EM IC O N DU C TO R Typical Characteristics 600 1000 Total Capacitance [pF] f = 1MHz Ta = 25℃ 100 VR = 0V VR = 2V VR = 5V PD-Power Passipation [mW] 500 400 300 200 100 VR = 20V 10 VR = 30V 0 0 40 1 Temperature [℃ ] 80 120 160 200 0 20 40 VZ - Reverse Voltage [V] 60 80 Figure 1. Power Dissipation vs Ambient Temperature Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature Figure 2. Total Capacitance Differential Zener Impedance [Ω ] 1000 1000 Iz=1mA Iz=2mA Ta = 25℃ Forward Current [mA] 100 Ta = 25℃ 100 Iz=5mA Iz=10mA 10 10 1 1 0.1 1 10 VZ - Reverse Voltage [V] 100 0.1 0 0.2 0.4 0.6 0.8 VF - Forw ard Voltage [m V] 1 1.2 Figure 3. Differential Impedance vs. Zener Voltage Figure 4. Forward Current vs. Forward Voltage 300 250 Reverse Current [mA] 200 150 100 50 0 0 2 4 6 VZ - Reverse Voltage [V] 8 10 PD = 500mW Ta = 25℃ 100 PD = 500mW Ta = 25℃ Reverse Current [mA] 10 1 0.1 0.01 15 25 35 45 55 65 VZ - Reverse Voltage [V] 75 Figure 5. Reverse Current vs. Reverse Voltage Figure 6. Reverse Current vs. Reverse Voltage Number: DB-034 June 2008 / F Page 4 ® TAK CHEONG S EM IC O N DU C TO R Package Outline Package Case Outline DO-35 DIM Min A B C D 0.46 3.05 25.40 1.53 Millimeters Max 0.55 5.08 38.10 2.28 DO-35 Inches Min 0.018 0.120 1.000 0.060 Max 0.022 0.200 1.500 0.090 Notes: 1. 2. All dimensions are within JEDEC standard. DO35 polarity denoted by cathode band. Number: DB-034 June 2008 / F Page 5 TAK CHEONG ® D ISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A