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TSL12T, TSL13T LIGHT-TO-VOLTAGE CONVERTERS
TAOS062D − APRIL 2007
D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D
Photodiode, Transconductance Amplifier, and Feedback Components Single-Supply Operation . . . 2.7 V to 5.5 V High Irradiance Responsivity . . . Typical 96 mV/(μW/cm2) at λp = 640 nm (TSL12T) Low Supply Current . . . 1.1 mA Typical Low-Profile Surface-Mount Package RoHS Compliant
N/C 1 GND 2
PACKAGE T 4-LEAD SMD (TOP VIEW)
4 OUT 3 VDD
Description
The TSL12T and TSL13T are cost-optimized, highly integrated light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 80 MΩ and 20 MΩ, respectively) on a single monolithic integrated circuit. The photodiode active area is 0.5 mm × 0.5 mm and the sensors respond to light in the range of 320 nm to 1050 nm. Output voltage is linear with light intensity (irradiance) incident on the sensor over a wide dynamic range. These devices are supplied in a low-profile surface-mount package (T).
Functional Block Diagram
− +
Voltage Output
Available Options
DEVICE TSL12 TSL13 TA 0°C to 70° 0°C to 70° PACKAGE − LEADS 4-lead Low-Profile Surface-Mount 4-lead Low-Profile Surface-Mount PACKAGE DESIGNATOR T T ORDERING NUMBER TSL12T TSL13T
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Terminal Functions
TERMINAL NAME GND OUT VDD N/C T PKG NO. 2 4 3 1 Output voltage. Supply voltage. No connection. DESCRIPTION Power supply ground (substrate). All voltages are referenced to GND.
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 mA Duration of short-circuit current at (or below) 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 25°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 25°C to 85°C Solder conditions in accordance with JEDEC J−STD−020A, maximum temperature . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltages are with respect to GND. 2. Output may be shorted to supply.
Recommended Operating Conditions
MIN Supply voltage, VDD Operating free-air temperature, TA 2.7 0 NOM MAX 5.5 70 UNIT V °C
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Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 640 nm, RL = 10 kΩ (unless otherwise noted) (see Notes 3, 4, 5)
PARAMETER PARAMETER VOM Maximum output voltage Ee = 20.5 VO Output voltage μW/cm2 Ee = 83 μW/cm2 Ee = 41 μW/cm2 Ee = 166 μW/cm2 Re VOS Vd ID Irradiance responsivity Extrapolated offset voltage Dark voltage Supply current Note 6 Note 6 Ee = 0 Ee = 20.5 μW/cm2 Ee = 83 μW/cm2 −0.02 0 1.1 96 0.03 0.08 0.08 1.7 1.1 1.7 −0.02 0 4 4 24 0.03 0.08 0.08 mV/ (μW/ cm2) V V mA TEST CONDITIONS TSL12T MIN 4.6 1.5 TYP 4.9 2 2.5 1.5 2 2.5 V MAX MIN 4.6 TSL13T TYP 4.9 MAX UNIT V
NOTES: 3. 4. 5. 6.
Measurements are made with RL = 10 kΩ between output and ground. Optical measurements are made using small-angle incident radiation from an LED optical source. The 640 nm input irradiance Ee is supplied by an AlInGaP LED with peak wavelength λp = 640 nm. Irradiance responsivity is characterized over the range VO = 0.2 to 4 V. The best-fit straight line of Output Voltage VO versus irradiance Ee over this range may have a positive or negative extrapolated VO value for Ee = 0. For low irradiance values, the output voltage VO versus irradiance Ee characteristic is non linear with a deviation toward VO = 0, Ee = 0 origin from the best-fit straight line referenced above.
Dynamic Characteristics at VDD = 5 V, TA = 25°C, λp = 640 nm, RL = 10 kΩ (unless otherwise noted) (see Figure 1)
PARAMETER tdr tr tdf tf Output pulse delay time for rising edge (0% delay time rising edge to 10%) Output pulse rise time (10% to 90%) Output pulse delay time for falling edge delay time falling edge (100% to 90%) Output pulse fall time (90% to 10%) TEST CONDITIONS Min VO = 0 V; Peak VO = 2 V Min VO = 0.5 V; Peak VO = 2 V Min VO = 0 V; Peak VO = 2 V Min VO = 0.5 V; Peak VO = 2 V Min VO = 0 V; Peak VO = 2 V Min VO = 0.5 V; Peak VO = 2 V Min VO = 0 V; Peak VO = 2 V Min VO = 0.5 V; Peak VO = 2 V TSL12T MIN TYP 13 2.3 20 10 2.3 2.2 10 9 MAX MIN TSL13T TYP 1.7 1.2 7.2 6.5 1.2 1.1 6.8 6.4 MAX UNIT μs μs μs μs
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PARAMETER MEASUREMENT INFORMATION
VDD Pulse Generator LED (see Note A) TSL1x 2 TEST CIRCUIT − + RL Output Min VO 3 Input Min Ee 4 Peak VO tdr tr 90% 10% 90% 10% tdf tf Peak Ee
OUTPUT VOLTAGE WAVEFORM (See Note B)
NOTES: A. The input irradiance is supplied by a pulsed AlInGaP light-emitting diode with the following characteristics: λp = 640 nm, tr < 1 μs, tf < 1 μs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF.
Figure 1. Switching Times
TYPICAL CHARACTERISTICS
PHOTODIODE SPECTRAL RESPONSIVITY
1
0.8 Relative Responsivity
0.6
0.4
0.2
0 300
400
500
600 700 800 900 λ − Wavelength − nm
1000 1100
Figure 2
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TSL12T, TSL13T LIGHT-TO-VOLTAGE CONVERTERS
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TYPICAL CHARACTERISTICS
TSL12T
RISING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
1000 Min VO = 0 V 1000
RISING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
Min VO = 0.5 V
100 Time — ms tr Time — ms
100
10
tdr
10
tr
1 0 0.5 1 1.5 2 2.5 3 3.5 4 VO − Peak Output Voltage − V
1 0 0.5 1 1.5
tdr 2 2.5 3 3.5 4
VO − Peak Output Voltage − V
Figure 3
FALLING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
1000 Min VO = 0 V 1000
Figure 4
FALLING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
Min VO = 0.5 V
100 Time — ms Time — ms
100
tf 10
10
tf
tdf 1 0 0.5 1 1.5 2 2.5 3 3.5 4 VO − Peak Output Voltage − V 1 0 0.5 1 1.5
tdf 2 2.5 3 3.5 4
VO − Peak Output Voltage − V
Figure 5
Figure 6
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TYPICAL CHARACTERISTICS
TSL12T
NORMALIZED OUTPUT VOLTAGE vs. ANGULAR DISPLACEMENT
1 1
NORMALIZED OUTPUT VOLTAGE vs. ANGULAR DISPLACEMENT
VO — Output Voltage — Normalized
0.8 Optical Axis
VO — Output Voltage — Normalized
0.8 Optical Axis -Q −60
0.6
0.6
0.4
0.4
0.2
0.2
0 −90
-Q −60
+Q 90
−30 0 30 60 Q − Angular Displacement − °
0 −90
+Q 90
−30 0 30 60 Q − Angular Displacement − °
Figure 7
Figure 8
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TSL12T, TSL13T LIGHT-TO-VOLTAGE CONVERTERS
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TYPICAL CHARACTERISTICS
TSL13T
RISING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
20 Min VO = 0 V 20
RISING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
Min VO = 0.5 V
16
16
Time — ms
8
tr
Time — ms
12
12
8
tr
4 tdr 0
4 tdr 0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
VO − Peak Output Voltage − V
VO − Peak Output Voltage − V
Figure 9
FALLING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
30 Min VO = 0 V 25 25
Figure 10
FALLING EDGE DYNAMIC CHARACTERISTICS vs. PEAK OUTPUT VOLTAGE
30 Min VO = 0.5 V
20 Time — ms Time — ms tf
20
15
15
10
10 tf 5
5 tdf 0 0 0.5 1 1.5 2 2.5 3 3.5 4
tdf 0 0 0.5 1 1.5 2 2.5 3 3.5 4
VO − Peak Output Voltage − V
VO − Peak Output Voltage − V
Figure 11
Figure 12
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TYPICAL CHARACTERISTICS
TSL13T
NORMALIZED OUTPUT VOLTAGE vs. ANGULAR DISPLACEMENT
1 1
NORMALIZED OUTPUT VOLTAGE vs. ANGULAR DISPLACEMENT
VO — Output Voltage — Normalized
0.8 Optical Axis
VO — Output Voltage — Normalized
0.8 Optical Axis -Q −60
0.6
0.6
0.4
0.4
0.2
0.2
0 −90
-Q −60
+Q 90
−30 0 30 60 Q − Angular Displacement − °
0 −90
+Q 90
−30 0 30 60 Q − Angular Displacement − °
Figure 13
Figure 14
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APPLICATION INFORMATION PCB Pad Layout
Suggested PCB pad layout guidelines for the T package are shown in Figure 15.
2.90
1.50
1.00 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice.
0.90
Figure 15. Suggested T Package PCB Layout
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MECHANICAL DATA
The TSL12T and TSL13T are supplied in a low-profile surface-mount package. This package contains no lead (Pb). PACKAGE T TOP VIEW
PIN 1
Four-Lead Surface Mount Device
1.50
0.55
Photodiode (Note C)
DETAIL A: TYPICAL PACKAGE TERMINAL
SIDE VIEW
3.10 0.35 2
0.10
0.90
y 75
0.40
1.35
0.80 0.45 R 0.20
BOTTOM VIEW
A
PIN 1 3.80 NOTES: A. B. C. D. E.
All linear dimensions are in millimeters. Terminal finish is gold. The center of the 0.50 mm × 0.50 mm integrated photodiode active area is typically located in the center of the package. Dimension tolerance is ± 0.15 mm. This drawing is subject to change without notice.
Figure 16. Package T — Four-Lead Surface Mount Device Packaging Configuration
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ÈÈÈ ÎÈÈÈÈÈ ÎÎ ÈÈÈÈÈÈÈÈ ÎÎÎ
0.50 2.60 r
Pb
Lead Free
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MECHANICAL DATA
0.30 + 0.050 2.10
SIDE VIEW
1.75 + 0.100 8 Typ
B
j 1.50
4 + 0.100 2 + 0.100
END VIEW
TOP VIEW
5.50 + 0.100 j 1.50 R 0.20 TYP B A A
12 + 0.100
DETAIL A
2.90 + 0.100 Ao 3.09 MAX
DETAIL B
R 0.20 TYP
R 0.20 TYP
4.29 MAX 4.10 + 0.100 Bo
1.80 Ko NOTES: A. B. C. D. E. F. G. All linear dimensions are in millimeters. The dimensions on this drawing are for illustrative purposes only. Dimensions of an actual carrier may vary slightly. Symbols on drawing Ao, Bo, and Ko are defined in ANSI EIA Standard 481−B 2001. Each reel is 178 millimeters in diameter and contains 1000 parts. TAOS packaging tape and reel conform to the requirements of EIA Standard 481−B. In accordance with EIA standard, device pin 1 is located next to the sprocket holes in the tape. This drawing is subject to change without notice.
Figure 17. Four Lead Surface Mount Package Carrier Tape
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MANUFACTURING INFORMATION
The reflow profile specified here describes expected maximum heat exposure of devices during the solder reflow process of the device on a PWB. Temperature is measured at the top of the device. Devices should be limited to one pass through the solder reflow profile. Table 1. TSL12T, TSL13T Solder Reflow Profile
PARAMETER Average temperature gradient in preheating Soak time Time above T1, 217°C Time above T2, 230°C Time above T3, (Tpeak −10°C) Peak temperature in reflow Temperature gradient in cooling tsoak t1 t2 t3 Tpeak REFERENCE TSL12T, TSL13T 2.5°C/sec 2 to 3 minutes Max 60 sec Max 50 sec Max 10 sec 260° C (−0°C/+5°C) Max −5°C/sec
Tpeak
Not to scale — for reference only
T3 T2 T1
Temperature (5C) Time (sec) tsoak
t3 t2 t1 Figure 18. TSL12T, TSL13T Solder Reflow Profile
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MANUFACTURING INFORMATION Moisture Sensitivity
Optical characteristics of the device can be adversely affected during the soldering process by the release and vaporization of moisture that has been previously absorbed into the package molding compound. To ensure the package molding compound contains the smallest amount of absorbed moisture possible, each device is dry−baked prior to being packed for shipping. Devices are packed in a sealed aluminized envelope with silica gel to protect them from ambient moisture during shipping, handling, and storage before use. This package has been assigned a moisture sensitivity level of MSL 3 and the devices should be stored under the following conditions: Temperature Range Relative Humidity Total Time Opened Time 5°C to 50°C 60% maximum 6 months from the date code on the aluminized envelope — if unopened 168 hours or fewer
Rebaking will be required if the devices have been stored unopened for more than 6 months or if the aluminized envelope has been open for more than 168 hours. If rebaking is required, it should be done at 90°C for 4 hours.
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PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.
LEAD-FREE (Pb-FREE) and GREEN STATEMENT
Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material). Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated.
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