TSL250RD

r r TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 D Monolithic Silicon IC Containing D D D D D D D D Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to a Voltage High Irradiance Responsivity, Typically − 64 mV/(mW/cm2 ) at lp = 640 nm (TSL250RD) − 58 mV/(mW/cm2 ) at lp = 940 nm (TSL260RD) Single Voltage Supply Operation Low Dark (Offset) Voltage . . . 10 mV Max Low Supply Current . . . 1.1 mA Typical Wide Supply-Voltage Range . . . 2.7 V to 5.5 V Low-Profile Surface-Mount Package: − Clear Plastic for TSL250RD and TSL251RD − Visible Light-Cutoff Filter Plastic for TSL260RD and TSL261RD Lead (Pb) Free and RoHS Compliant Package PACKAGE D 8-LEAD SOIC (TOP VIEW) NC 1 NC 2 NC 3 GND 4 8 NC 7 OUT 6 VDD 5 NC Description The TSL250RD, TSL251RD, TSL260RD, and TSL261RD are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier on a single monolithic IC. The TSL250RD and TSL260RD have an equivalent feedback resistance of 16 MΩ and a photodiode measuring 1 square mm. The TSL251RD and TSL261RD have an equivalent feedback resistance of 8 MΩ and a photodiode measuring 0.5 square mm. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices have improved amplifier offset-voltage stability and low power consumption. Functional Block Diagram − + Voltage Output Terminal Functions TERMINAL NAME GND OUT VDD NO. 4 7 6 Output voltage. Supply voltage. r Copyright E 2007, TAOS Inc. DESCRIPTION Ground (substrate). All voltages are referenced to GND. The LUMENOLOGY r Company Texas Advanced Optoelectronic Solutions Inc. 1001 Klein Road S Suite 300 S Plano, TX 75074 S (972) 673-0759 r www.taosinc.com 1 TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 mA Duration of short-circuit current at (or below) 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 25°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 25°C to 85°C Solder conditions in accordance with JEDEC J−STD−020A, maximum temperature (see Note 3) . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltages are with respect to GND. 2. Output may be shorted to supply. 3. The device may be hand soldered provided that heat is applied only to the solder pad and no contact is made between the tip of the solder iron and the device lead. The maximum time heat should be applied to the device is 5 seconds. Recommended Operating Conditions MIN Supply voltage, VDD Operating free-air temperature, TA 2.7 0 NOM MAX 5.5 70 UNIT V °C Electrical Characteristics at VDD = 5 V, TA = 25°C, RL = 10 kΩ (unless otherwise noted) (see Notes 3, 4, 5, and 6) PARAMETER Dark voltage Maximum output voltage TEST S CONDITIONS CONDITIONS Ee = 0 VDD = 4.5 V Ee = 31 μW/cm2 VO Output voltage Ee = 124 μW/cm2 Ee = 34 μW/cm2 Ee = 132 μW/cm2 Re Irradiance responsivity See Note 7 VO = 2 V @ 25°C, TA = 0°C to 70°C (see Note 8) Ee = 31 IDD Supply Supply current μW/cm2 Ee = 124 μW/cm2 Ee = 34 μW/cm2 Ee = 132 μW/cm2 NOTES: 4. 5. 6. 7. 8. 64 2 0.1 1.1 1.7 1.1 1.7 1.1 1.7 1.1 1.7 mA 16 2 0.1 58 8 0.4 λp = 640 nm TSL250RD MIN 0 3 1.5 TYP 5 3.3 2 2.5 1.5 2 2.5 1 2 3 1 2 15 8 0.4 3 mV/ (μW/ cm2) mV/°C %/°C V MAX 10 MIN 0 3 TSL251RD TYP 5 3.3 MAX 10 MIN 0 3 TYP 5 3.3 λp = 940 nm TSL260RD MAX 10 MIN 0 3 TSL261RD TYP 5 3.3 MAX 10 mV V UNIT VD VOM Temperature coefficient coefficient of output voltage (VO) Measurements are made with RL = 10 kΩ between output and ground. Optical measurements are made using small-angle incident radiation from an LED optical source. The 640 nm input irradiance Ee is supplied by an AlInGaP LED with peak wavelength λp = 640 nm. The 940 nm input irradiance Ee is supplied by a GaAs LED with peak wavelength λp = 940 nm. Irradiance responsivity is characterized over the range VO = VD to 3 V. The best-fit straight line of Output Voltage VO versus irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0. 9. The temperature coefficient of output voltage measurement is made by adjusting irradiance such that VO is approximately 2 V at 25°C and then with irradiance held constant, measuring VO while varying the temperature between 0°C and 70°C. r r The LUMENOLOGY r Company Copyright E 2007, TAOS Inc. 2 www.taosinc.com TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 Dynamic Characteristics at VDD = 5 V, TA = 25°C, RL = 10 kΩ (unless otherwise noted) (see Figure 1) PARAMETER Output pulse rise time Output pulse fall time Output noise voltage TEST S CONDITIONS CONDITIONS λp = 640 nm TSL250RD MIN TYP 260 MAX MIN TSL251RD TYP 70 MAX MIN TYP 260 λp = 940 nm TSL260RD MAX MIN TSL261RD TYP 70 MAX μs UNIT tr VO(peak) = 2 V tf VO(peak) = 2 V Ee = 0, f = 1000 Hz 260 70 260 70 μs μV/ (√(Hz)) Vn 0.8 0.7 0.8 0.7 PARAMETER MEASUREMENT INFORMATION VDD Pulse Generator LED (see Note A) TSL2xxRD 1 TEST CIRCUIT − + RL Output (see Note B) 10% 2 Ee Input 3 Output tr 90% 90% 10% tf VOLTAGE WAVEFORM NOTES: A. The input irradiance is supplied by a pulsed light-emitting diode with tr < 1 μs, tf < 1 μs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF. Figure 1. Switching Times The LUMENOLOGY r Company r r Copyright E 2007, TAOS Inc. www.taosinc.com 3 TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE vs IRRADIANCE 10 VDD = 5 V λp = 640 nm RL = 10 kW TA = 25°C 10 VDD = 5 V λp = 940 nm RL = 10 kW TA = 25°C OUTPUT VOLTAGE vs IRRADIANCE Output Voltage (VO − VD) — V 1 Output Voltage (VO − VD) — V 1 TSL250RD 0.1 TSL251RD TSL260RD 0.1 TSL261RD 0.01 0.1 1 10 100 1000 Ee — Irradiance — mW/cm2 0.01 0.1 1 10 100 1000 Ee — Irradiance — mW/cm2 Figure 2 Figure 3 PHOTODIODE SPECTRAL RESPONSIVITY 1.2 TA = 25°C 1 PHOTODIODE SPECTRAL RESPONSIVITY TA = 25°C 1.0 Relative Responsivity 0.8 Relative Responsivity 0.8 0.6 0.6 0.4 TSL260RD 0.2 TSL261RD 0.4 TSL250RD 0.2 TSL251RD 0 300 0 400 500 600 700 800 900 λ − Wavelength − nm 1000 1100 600 700 800 900 1000 λ − Wavelength − nm 1100 Figure 4 Figure 5 Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 4 www.taosinc.com TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 TYPICAL CHARACTERISTICS MAXIMUM OUTPUT VOLTAGE vs SUPPLY VOLTAGE 5 VOM — Maximum Output Voltage — V RL = 10 kΩ TA = 25°C IDD — Supply Current — mA 1.4 VDD = 5 V RL = 10 kW TA = 25°C SUPPLY CURRENT vs OUTPUT VOLTAGE 4 1.2 3 1 2 0.8 1 0.6 0 2.5 3 3.5 4 4.5 VDD − Supply Voltage − V 5 5.5 0.4 0 1 2 3 VO − Output Voltage − V 4 Figure 6 Figure 7 NORMALIZED OUTPUT VOLTAGE vs. ANGULAR DISPLACEMENT 1 VO — Output Voltage — Normalized 0.8 Optical Axis Angular Displacement is Equal for Both Aspects 0 −90 −60 −30 0 30 60 Q − Angular Displacement − ° 90 0.6 0.4 0.2 Figure 8 The LUMENOLOGY r Company r r Copyright E 2007, TAOS Inc. www.taosinc.com 5 TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 APPLICATION INFORMATION Power Supply Considerations For optimum device performance, power-supply lines should be decoupled by a 0.01-μF to 0.1-μF capacitor with short leads connected between VDD and GND mounted close to the device package. Device Operational Details The voltage developed at the output pin (OUT) is given by: VO = VD + (Re) (Ee) where: VO VD Re Ee is the output voltage is the output voltage for dark condition (Ee = 0) is the device responsivity for a given wavelength of light given in mV/(μW/cm2) is the incident irradiance in μW/cm2 VD is a fixed offset voltage resulting primarily from the input offset voltage of the internal op amp. As shown in the equation above, this voltage represents a constant, light-independent term in the total output voltage VO. At low light levels, this offset voltage can be a significant percentage of VO. For optimum performance of any given device over the full output range, the value of VD should be measured (in the absence of light) and later subtracted from all subsequent light measurements (see Figures 2 and 3). PCB Pad Layout Suggested PCB pad layout guidelines for the D package is shown in Figure 9. 4.65 6.90 1.27 0.50 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. 2.25 Figure 9. Suggested D Package PCB Layout Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 6 www.taosinc.com TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 MECHANICAL DATA This SOIC package consists of an integrated circuit mounted on a lead frame and encapsulated with an electrically nonconductive clear plastic compound. The photodiode area is typically 1.02 mm2 for the TSL250RD and TSL260RD, and is typically 0.514 mm2 for the TSL251RD and TSL261RD. PACKAGE D NOTE B 2.12 + 0.250 3.00 + 0.250 PLASTIC SMALL-OUTLINE TOP VIEW BOTTOM VIEW PIN 1 PIN 1 6 y 1.27 8 y 0.510 0.330 SIDE VIEW j 2.8 TYP CLEAR WINDOW END VIEW 0.50 0.25 455 0.88 TYP TOP OF SENSOR DIE A 1.75 1.35 4.00 3.80 6.20 5.80 5.00 4.80 5.3 MAX DETAIL A 0.25 0.19 Pb NOTES: A. B. C. D. 1.27 0.41 0.25 0.10 All linear dimensions are in millimeters. The center of the photo-active area is referenced to the upper left corner tip of the lead frame (Pin 1). Package is molded with an electrically nonconductive clear plastic compound having an index of refraction of 1.55. This drawing is subject to change without notice. Figure 10. Package D — Plastic Small Outline IC Packaging Configuration The LUMENOLOGY r Company Copyright E 2007, TAOS Inc. r r www.taosinc.com 7 TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 MECHANICAL DATA SIDE VIEW Ko 2.11 + 0.10 [0.083 + 0.004] 0.292 + 0.013 [0.0115 + 0.0005] TOP VIEW j 1.50 8 + 0.1 [0.315 + 0.004] 4 + 0.1 [0.157 + 0.004] 2 + 0.05 [0.079 + 0.002] 1.75 + 0.10 [0.069 + 0.004] END VIEW B 5.50 + 0.05 [0.217 + 0.002] 12 + 0.3 − 0.1 [0.472 + 0.12 − 0.004] A A B DETAIL A DETAIL B Ao NOTES: A. B. C. D. E. F. 6.45 + 0.10 [0.254 + 0.004] Bo 5.13 + 0.10 [0.202 + 0.004] All linear dimensions are in millimeters [inches]. The dimensions on this drawing are for illustrative purposes only. Dimensions of an actual carrier may vary slightly. Symbols on drawing Ao, Bo, and Ko are defined in ANSI EIA Standard 481−B 2001. Each reel is 178 millimeters in diameter and contains 1000 parts. TAOS packaging tape and reel conform to the requirements of EIA Standard 481−B. This drawing is subject to change without notice. Figure 11. Package D Carrier Tape Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 8 www.taosinc.com TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 MANUFACTURING INFORMATION The Plastic Small Outline IC package (D) has been tested and has demonstrated an ability to be reflow soldered to a PCB substrate. The solder reflow profile describes the expected maximum heat exposure of components during the solder reflow process of product on a PCB. Temperature is measured on top of component. The component should be limited to a maximum of three passes through this solder reflow profile. Table 1. TSL2xxRD Solder Reflow Profile PARAMETER Average temperature gradient in preheating Soak time Time above 217°C Time above 230°C Time above Tpeak −10°C Peak temperature in reflow Temperature gradient in cooling tsoak t1 t2 t3 Tpeak REFERENCE TSL2xxRD 2.5°C/sec 2 to 3 minutes Max 60 sec Max 50 sec Max 10 sec 260° C (−0°C/+5°C) Max −5°C/sec Tpeak Not to scale — for reference only T3 T2 T1 Temperature (5C) Time (sec) tsoak t3 t2 t1 Figure 12. TSL2xxRD Solder Reflow Profile Graph The LUMENOLOGY r Company r r Copyright E 2007, TAOS Inc. www.taosinc.com 9 TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 Moisture Sensitivity Optical characteristics of the device can be adversely affected during the soldering process by the release and vaporization of moisture that has been previously absorbed into the package molding compound. To prevent these adverse conditions, all devices shipped in carrier tape have been pre-baked and shipped in a sealed moisture-barrier bag. No further action is necessary if these devices are processed through solder reflow within 24 hours of the seal being broken on the moisture-barrier bag. However, for all devices shipped in tubes or if the seal on the moisture barrier bag has been broken for 24 hours or longer, it is recommended that the following procedures be used to ensure the package molding compound contains the smallest amount of absorbed moisture possible. For devices shipped in tubes: 1. Remove devices from tubes 2. Bake devices for 4 hours, at 90°C 3. After cooling, load devices back into tubes 4. Perform solder reflow within 24 hours after bake Bake only a quantity of devices that can be processed through solder reflow in 24 hours. Devices can be re-baked for 4 hours, at 90°C for a cumulative total of 12 hours (3 bakes for 4 hours at 90°C). For devices shipped in carrier tape: 1. Bake devices for 4 hours, at 90°C in the tape 2. Perform solder reflow within 24 hours after bake Bake only a quantity of devices that can be processed through solder reflow in 24 hours. Devices can be re−baked for 4 hours in tape, at 90°C for a cumulative total of 12 hours (3 bakes for 4 hours at 90°C). Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 10 www.taosinc.com TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters. LEAD-FREE (Pb-FREE) and GREEN STATEMENT Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material). Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. NOTICE Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK. LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated. The LUMENOLOGY r Company r r Copyright E 2007, TAOS Inc. www.taosinc.com 11 TSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS TAOS050K − OCTOBER 2007 Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 12 www.taosinc.com