TSL257-LF

r r TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D D Photodiode, Operational Amplifier, and Feedback Components High Sensitivity Single Voltage Supply Operation (2.7 V to 5.5 V) Low Noise (200 μVrms Typ to 1 kHz) Rail-to-Rail Output High Power-Supply Rejection (35 dB at 1 kHz) Compact 3-Leaded Plastic Package RoHS Compliant (−LF Package Only) PACKAGE S SIDELOOKER (FRONT VIEW) PACKAGE SM SURFACE MOUNT SIDELOOKER (FRONT VIEW) 1 GND 2 VDD 3 OUT Description 1 GND 2 VDD 3 OUT The TSL257 is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to light intensity (irradiance) on the photodiode. The TSL257 has a transimpedance gain of 320 MΩ. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead clear plastic sidelooker package with an integral lens. When supplied in the lead (Pb) free package, the device is RoHS compliant. Functional Block Diagram − + Voltage Output Available Options DEVICE TSL257 TSL257 TSL257 TA 0°C to 70°C 0°C to 70°C 0°C to 70°C PACKAGE − LEADS 3-lead Sidelooker 3-lead Sidelooker — Lead (Pb) Free 3-lead Surface-Mount Sidelooker — Lead (Pb) Free PACKAGE DESIGNATOR S S SM ORDERING NUMBER TSL257 TSL257−LF TSL257SM−LF Terminal Functions TERMINAL NAME GND OUT VDD NO. 1 3 2 Output voltage Supply voltage r Copyright E 2007, TAOS Inc. DESCRIPTION Ground (substrate). All voltages are referenced to GND. The LUMENOLOGY r Company Texas Advanced Optoelectronic Solutions Inc. 1001 Klein Road S Suite 300 S Plano, TX 75074 S (972) 673-0759 r www.taosinc.com 1 TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 mA Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 25°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . − 25°C to 85°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) . . . . . . . . . . . . . . . . . . . . 260°C Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND. Recommended Operating Conditions MIN Supply voltage, VDD Operating free-air temperature, TA 2.7 0 MAX 5.5 70 UNIT V °C Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted) (see Notes 2 and 3) PARAMETER VD VOM VO αVD Dark voltage Maximum output voltage swing Output voltage Temperature coefficient of dark voltage (VD) Ee = 0 VDD = 4.5 V, VDD = 4.5 V, TA = 0°C to 70°C λp = 428 nm, see Notes 4 and 8 Ne Irradiance responsivity λp = 470 nm, see Notes 5 and 8 λp = 565 nm, see Notes 6 and 8 λp = 645 nm, see Notes 7 and 8 PSRR IDD Power supply rejection ratio pp y j Supply current fac = 100 Hz, see Note 9 fac = 1 kHz, see Note 9 Ee = 1.54 μW/cm2, λp = 470 nm, Note 5 No Load RL = 10 kΩ 4 1.6 TEST CONDITIONS MIN 0 4.49 4.2 2 −15 1.18 1.30 1.58 1.68 55 35 1.9 3.5 dB dB mA V/(μW/cm2) 2.4 TYP MAX 15 UNIT mV V V μV/°C Ee = 1.54 μW/cm2, λp = 470 nm, Note 5 NOTES: 2. Measured with RL = 10 kΩ between output and ground. 3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source. 4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength λp = 428 nm, spectral halfwidth Δλ½ = 65 nm. 5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength λp = 470 nm, spectral halfwidth Δλ½ = 35 nm. 6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength λp = 565 nm, spectral halfwidth Δλ½ = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength λp = 645 nm, spectral halfwidth Δλ½ = 25 nm. 8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0. 9. Power supply rejection ratio PSRR is defined as 20 log (ΔVDD(f)/ΔVO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V. Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 2 www.taosinc.com TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted) PARAMETER tr tf ts Output pulse rise time, 10% to 90% of final value Output pulse fall time, 10% to 90% of final value Output settling time to 1% of final value Integrated noise voltage Vn Output noise voltage, rms p g, TEST CONDITIONS See Note 10 and Figure 1 See Note 10 and Figure 1 See Note 10 and Figure 1 f = dc to 1 kHz f = 10 Hz f = 100 Hz f = 1 kHz NOTE 10: Switching characteristics apply over the range VO = 0.1 V to 4.5 V. Ee = 0 Ee = 0 Ee = 0 Ee = 0 MIN TYP 160 150 330 200 6 6 7 μV/√Hz rms / MAX 250 250 UNIT μs μs μs μVrms PARAMETER MEASUREMENT INFORMATION VDD Pulse Generator LED (see Note A) TSL257 1 TEST CIRCUIT − + RL Output (see Note B) 10% 2 Ee Input 3 Output tr 90% 90% 10% tf VOLTAGE WAVEFORM NOTES: A. The input irradiance is supplied by a pulsed InGaN light-emitting diode with the following characteristics: λp = 470 nm, tr < 1 μs, tf < 1 μs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF. Figure 1. Switching Times The LUMENOLOGY r Company r r Copyright E 2007, TAOS Inc. www.taosinc.com 3 TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 TYPICAL CHARACTERISTICS POWER SUPPLY REJECTION RATIO vs FREQUENCY 80 Power Supply Rejection Ratio — dB 500 700 900 λ − Wavelength − nm 1100 70 60 50 40 30 20 10 0 PHOTODIODE SPECTRAL RESPONSIVITY 1.6 1.4 1.2 Relative Responsivity 1.0 0.8 0.6 0.4 0.2 0 300 TA = 25°C Normalized to 470 nm 10 102 103 104 f − Frequency − Hz 105 106 Figure 2 Figure 3 DARK VOLTAGE vs FREE-AIR TEMPERATURE 10 9 8 V D− Dark Voltage − mV Normalized Response 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 TA − Free-Air Temperature − °C 70 VDD = 5 V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −90 −70 NORMALIZED RESPONSE vs ANGULAR DISPLACEMENT −50 −30 −10 10 30 50 Angular Displacement − 5 70 90 Figure 4 Figure 5 Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 4 www.taosinc.com TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 APPLICATION INFORMATION PCB Pad Layout Suggested PCB pad layout guidelines for the SM surface mount package are shown in Figure 6. 1.0 1.0 1.0 3.2 1.0 NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. 1.0 Figure 6. Suggested SM Package PCB Layout The LUMENOLOGY r Company r r Copyright E 2007, TAOS Inc. www.taosinc.com 5 TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 MECHANICAL DATA The device is supplied in a clear plastic three-lead sidelooker through-hole package (S). PACKAGE S TOP VIEW 4.60 PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE 2.60 R 0.90 1.64 FRONT VIEW 2.30 1.80 SIDE VIEW 0.15 Note B 1 4.60 1.56 0.42 14.86 + 0.50 Pb 2y2 0.47 TYP Lead Free Available 0.42 NOTES: A. All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated. B. Dimension is to center of lens arc, which is located below the package face. C. The integrated photodiode active area is round with a typical diameter of 0.75 mm and is typically located in the center of the lens and 0.97 mm below the top of the lens surface. D. Index of refraction of clear plastic is 1.55. E. Lead finish for TSL257: solder dipped, 63% Sn/37% Pb. Lead finish for TSL257−LF: solder dipped, 100% Sn. F. This drawing is subject to change without notice. Figure 7. Package S — Single-In-Line Side-Looker Package Configuration Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 6 www.taosinc.com TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 MECHANICAL DATA PACKAGE SM TOP VIEW 4.60 PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGE 2.60 R 0.90 1.64 FRONT VIEW 2.30 SIDE VIEW 0.15 Note B 1.80 4.60 0.62 + 0.10 1.97 2.59 1.00 0.42 0.62 +0.10 −0.15 5.73 + 0.50 2y2 NOTES: A. B. C. D. E. F. Pb 0.47 TYP Lead Free 0.42 All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated. Dimension is to center of lens arc, which is located below the package face. The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface. Index of refraction of clear plastic is 1.55. Lead finish for TSL257SM−LF: solder dipped, 100% Sn. This drawing is subject to change without notice. Figure 8. Package SM — Surface Mount Side-Looker Package Configuration The LUMENOLOGY r Company Copyright E 2007, TAOS Inc. r r www.taosinc.com 7 TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters. LEAD-FREE (Pb-FREE) and GREEN STATEMENT Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material). Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TAOS has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. NOTICE Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK. LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced Optoelectronic Solutions Incorporated. Copyright E 2007, TAOS Inc. r r The LUMENOLOGY r Company 8 www.taosinc.com