Hardware
Documentation
D at a S h e e t
®
HAL 83xP
Robust Multi-Purpose Programmable
Linear Hall-Effect Sensor Family
Edition May 12, 2021
DSH000214_001EN
HAL 83xP
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by
copyright, patent, trademark and/or other intellectual property rights of TDK-Micronas. All
rights not expressly granted remain reserved by TDK-Micronas.
TDK-Micronas assumes no liability for errors and gives no warranty representation or
guarantee regarding the suitability of its products for any particular purpose due to
these specifications.
By this publication, TDK-Micronas does not assume responsibility for patent infringements
or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation.
Any information and data which may be provided in the document can and do vary in
different applications, and actual performance may vary over time.
All operating parameters must be validated for each customer application by customers’
technical experts. Any mention of target applications for our products is made without a
claim for fit for purpose as this has to be checked at system level.
Any new issue of this document invalidates previous issues. TDK-Micronas reserves
the right to review this document and to make changes to the document’s content at any
time without obligation to notify any person or entity of such revision or changes. For
further advice please contact us directly.
Do not use our products in life-supporting systems, military, aviation, or aerospace
applications! Unless explicitly agreed to otherwise in writing between the parties,
TDK-Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the
product could create a situation where personal injury or death could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of TDK-Micronas.
TDK-Micronas Trademarks
– HAL
Third-Party Trademarks
All other brand and product names or company names may be trademarks of their
respective companies.
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HAL 83xP
DATA SHEET
Contents
Page
Section
Title
5
6
6
6
1.
1.1.
1.2.
1.2.1.
Introduction
Applications
General Features
Device-specific features of HAL 835P
7
7
2.
2.1.
Ordering Information
Device-Specific Ordering Codes
8
8
11
12
20
20
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
Functional Description
General Function
A/D Converter
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
23
23
27
27
27
28
29
29
30
32
33
33
33
35
36
36
36
37
37
37
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
4.7.
4.8.
4.8.1.
4.8.2.
4.8.3.
4.8.4.
4.8.5.
4.9.
4.9.1.
4.9.2.
4.9.3.
4.9.4.
4.9.5.
Specifications
Outline Dimensions
Soldering, Welding and Assembly
Pin Connections and Short Descriptions
Dimensions of Sensitive Area
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Additional Information
PWM Output (HAL 835P only)
TO92UT Packages
Definition of sensitivity error ES
Power-On Operation
Diagnostics and Safety Features
Overvoltage and Undervoltage Detection
Open-Circuit Detection
Overtemperature and Short-Circuit Protection
EEPROM Redundancy
ADC Diagnostic
38
38
39
40
42
42
5.
5.1.
5.2.
5.3.
5.4.
5.5.
Application Notes
Application Circuit (for analog output mode only)
Use of two HAL 83xP in Parallel (for analog output mode only)
Temperature Compensation
Ambient Temperature
EMC and ESD
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HAL 83xP
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Contents
Page
Section
Title
43
43
43
46
47
48
51
6.
6.1.
6.2.
6.3.
6.4.
6.5.
6.6.
Programming
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
53
7.
Data Sheet History
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HAL 83xP
DATA SHEET
Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family
1. Introduction
The HAL 83xP is an improved version of the HAL 83x with an additional protective layer
on the die surface. This robust multipurpose programmable linear Hall sensors can
replace the HAL 805, HAL 815, HAL 825, and HAL 810. HAL 83xP offers better quality,
extended functionality and performance compared to the above mentioned devices.
This family consists of two members: the HAL 830P and the HAL 835P. HAL 835P is
the device with the full feature set and maximum performance compared with the
HAL 830P.
The HAL 83xP is an universal magnetic field sensor with linear output based on the Hall
effect. The IC can be used for angle or distance measurements when combined with a
rotating or moving magnet. The major characteristics like magnetic field range, sensitivity,
output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic,
which means that the output voltage is proportional to the magnetic flux and the supply
voltage. It is possible to program several devices connected to the same supply and
ground line.
The HAL 83xP features a temperature-compensated Hall plate with spinning-current
offset compensation, an A/D converter, digital signal processing, a D/A converter with
output driver, an EEPROM memory with redundancy and lock function for the calibration data, an EEPROM for customer serial number, a serial interface for programming
the EEPROM, and protection devices at all pins.
The HAL 83xP is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by
adjusting the output voltage directly to the input signal (like mechanical angle, distance,
or current). Individual adjustment of each sensor during the customer’s manufacturing
process is possible. With this calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly.
In addition, the temperature compensation of the Hall IC can be fit to common magnetic
materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy.
The calculation of the individual sensor characteristics and the programming of the
EEPROM memory can easily be done with a PC and the application kit from
TDK-Micronas.
The sensor is designed for hostile industrial and automotive applications and operates
with typically 5 V supply voltage in the ambient temperature range from 40 °C up to
160 °C. The HAL 83xP is available in the very small leaded package TO92UT-1/-2 and
is AECQ 100 qualified.
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HAL 83xP
DATA SHEET
1.1. Applications
Due to the sensor’s versatile programming characteristics and low temperature drift, the
HAL 83xP is the optimal system solution for applications such as:
– Pedal, turbo-charger, throttle and EGR systems
– Distance measurements
1.2. General Features
– high-precision linear Hall-effect sensor family with 12 bit ratiometric analog output and
digital signal processing
– multiple programmable magnetic characteristics in a non-volatile memory (EEPROM)
with redundancy and lock function
– operates from TJ = 40 °C up to 170 °C
– operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V
– operates with static magnetic fields and dynamic magnetic fields up to 2 kHz
– programmable magnetic field range from 30 mT up to 150 mT
– open-circuit (ground and supply line break detection) with 5 k pull-up and pull-down
resistor, overvoltage and undervoltage detection
– for programming an individual sensor within several sensors in parallel to the same
supply voltage, a selection can be done via the output pin
– temperature characteristics are programmable for matching common magnetic materials
– programmable clamping function
– programming via modulation of the supply voltage
– overvoltage and reverse-voltage protection at all pins
– magnetic characteristics extremely robust against mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
1.2.1. Device-specific features of HAL 835P
– very low offset (0.2 %VSUP) and sensitivity (1 %) drift over temperature
– selectable PWM output with 11 bit resolution and 8 ms period
– 14 bit multiplex analog output
– 15 mT magnetic range
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HAL 83xP
DATA SHEET
2. Ordering Information
A Micronas device is available in a variety of delivery forms. They are distinguished by a
specific ordering code:
XXX NNNN PA-T-C-P-Q-SP
Further Code Elements
Temperature Range
Package
Product Type
Product Group
Fig. 2–1: Ordering Code Principle
For a detailed information, please refer to the brochure:
“Micronas Sensors and Controllers: Ordering Codes, Packaging, Handling”.
2.1. Device-Specific Ordering Codes
The HAL 83xP is available in the following package and temperature variants.
Table 2–1: Available packages
Package Code (PA)
Package Type
UT
TO92UT-1/2
Table 2–2: Available temperature ranges
Temperature Code (T)
Temperature Range
A
TJ = 40 °C to 170 °C
The relationship between ambient temperature (TA) and junction temperature (TJ) is
explained in Section 5.4. on page 42.
For available variants for Configuration (C), Packaging (P), Quantity (Q), and Special
Procedure (SP) please contact TDK-Micronas.
Table 2–3: Available ordering codes and corresponding package marking
Available Ordering Codes
Package Marking
HAL830PUT-A-[C-P-Q-SP]
830PA
HAL835PUT-A-[C-P-Q-SP]
835PA
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HAL 83xP
DATA SHEET
3. Functional Description
3.1. General Function
The HAL 83xP is a programmable linear Hall-Effect sensor which provides an output
signal proportional to the magnetic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior) as long as the analog output mode is selected.
When the PWM output mode is selected, the PWM signal is not ratiometric to the supply
voltage (for HAL 835P only).
The external magnetic field component perpendicular to the branded side of the package
generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This
voltage is converted to a digital value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers and converted to an output signal. The function and the parameters for the DSP are explained in Section 3.2. on page 11.
The setting of the LOCK register disables the programming of the EEPROM memory for
all time. It also disables the reading of the memory. This register cannot be reset.
As long as the LOCK register is not set, the output characteristic can be adjusted by
programming the EEPROM registers. The IC is addressed by modulating the supply
voltage (see Fig. 3–1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor
generates an normal output signal. After detecting a command, the sensor reads or
writes the memory and answers with a digital signal on the output pin (see also application note “HAL 8xy, HAL 100x Programmer Board”). The output switches from analog to
digital during the communication. Several sensors in parallel to the same supply and
ground line can be programmed individually. The selection of each sensor is done via
its output pin.
For HAL 835P the digital output for generation of the BiPhase-M programming protocol
is also used to generate the PWM output signal.
The open-circuit detection function provides a defined output voltage for the analog output
if the VSUP or GND line are broken. Internal temperature compensation circuitry and
spinning-current offset compensation enable operation over the full temperature range with
minimal changes in accuracy and high offset stability. The circuitry also reduces offset
shifts due to mechanical stress from the package. The non-volatile memory consists of
redundant and non-redundant EEPROM cells. The non-redundant EEPROM cells are only
used to store production information for tracking inside the sensor. In addition, the sensor
IC is equipped with devices for overvoltage and reverse-voltage protection at all pins.
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HAL 83xP
DATA SHEET
HAL
83xP
VSUP
VOUT (V)
VSUP (V)
8
7
6
5
VSUP
OUT
GND
Fig. 3–1: Programming with VSUP modulation
VSUP
Internally
Stabilized
Supply and
Protection
Devices
Switched
Hall Plate
Temperature
Dependent
Bias
Oscillator
A/D
Converter
Digital
Signal
Processing
Open-Circuit,
Overvoltage,
Undervoltage
Detection
D/A
Converter
Analog
Output
50
Protection
Devices
50
OUT
EEPROM Memory
Supply
Level
Detection
Digital
Output
Lock Control
Open-Circuit
Detection
GND
Fig. 3–2: HAL 83xP block diagram
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HAL 83xP
DATA SHEET
ADC-Readout Register
14 bit
Digital Output
14 bit
Digital Signal Processing
A/D
Converter
TC
TCSQ
5 bit
3 bit
TC Range Select 2 bit
Digital
Filter
Mode Register
Range
Filter
3 bit
2 bit
Other: 8 bit
Multiplier
Sensitivity
14 bit
Adder
VOQ
11 bit
Clamp
low
8 bit
Limiter
Clamp
high
9 bit
D/A
Converter
Lock
Micronas
1 bit
Register
EEPROM Memory
Lock
Control
Fig. 3–3: Details of EEPROM Registers and Digital Signal Processing
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HAL 83xP
DATA SHEET
3.2. A/D Converter
The ADC used in HAL 83xP sensor has a "Sigma-Delta" architecture. It delivers an oversampled multi-bit stream with high-frequency shaped quantization noise. Low-pass
filtering performs an averaging of the signal by accumulation. With longer accumulation
the resolution of the data converter increases.
The accumulation takes place in the decimating filter, the low-pass filter, and the external
RC-filter.
A p p lic a tio n c irc u it:
R C L o w p a s s F ilte r
Fig. 3–4: Signal path
Example of a Sigma-Delta-ADC (simplified illustration)
Fig. 3–5: Sigma-Delta-ADC
A: Input Signal
B: Integrated value
C: High frequency data stream (modulated)
After filtering (D), the signal is reconstructed: the lower the cutoff frequency of this filter
the higher is the resolution.
The A/D readout of the sensor is a snapshot of the explained data stream.
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HAL 83xP
DATA SHEET
3.3. Digital Signal Processing and EEPROM
The DSP performs signal conditioning and allows adaption of the sensor to the customer
application. The parameters for the DSP are stored in the EEPROM registers. The details
are shown in Fig. 3–3.
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity: name of the parameter
The EEPROM registers consist of four groups:
Group 1 contains the registers for the adaptation of the sensor to the magnetic system:
MODE for selecting the magnetic field range and filter frequency, TC, TCSQ and
TC-Range for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output characteristics: SENSITIVITY,
VOQ, CLAMP-LOW (MIN-OUT), CLAMP-HIGH (MAX-OUT) and OUTPUT MODE. The
output characteristic of the sensor is defined by these parameters.
– The parameter VOQ (Output Quiescent Voltage) corresponds to the output signal at
B = 0 mT.
– The parameter Sensitivity defines the magnetic sensitivity:
V OUT
Sensitivity = ----------------B
– The output voltage can be calculated as:
V OUT = Sensitivity B + V OQ
The output voltage range can be clamped by setting the registers CLAMP-LOW and
CLAMP-HIGH in order to enable failure detection (such as short-circuits to VSUP or
GND and open connections).
Group 3 contains the general purpose register GP. The GP Register can be used to
store customer information, like a serial number after manufacturing. TDK-Micronas will
use this GP REGISTER to store informations like, Lot number, wafer number, x and y
position of the die on the wafer, etc. This information can be read by the customer and
stored in its own data base or it can stay in the sensor as is.
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HAL 83xP
DATA SHEET
Group 4 contains the Micronas registers and LOCK for the locking of all registers. The
MICRONAS registers are programmed and locked during production. These registers
are used for oscillator frequency trimming, A/D converter offset compensation, and several other special settings.
An external magnetic field generates a Hall voltage on the Hall plate. The ADC
converts the amplified positive or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to a digital value. This value can
be read by the A/D-READOUT register to ensure that the suitable converter
modulation is achieved. The digital signal is filtered in the internal low-pass filter and
manipulated according to the settings stored in the EEPROM. The digital value after
signal processing is readable in the D/A-READOUT register. Depending on the
programmable magnetic range of the Hall IC, the operating range of the A/D
converter is from 15 mT...+15 mT up to 150 mT...+150 mT.
During further processing, the digital signal is multiplied with the sensitivity factor, added to
the quiescent output voltage level and limited according to the clamping voltage levels. The
result is converted to an analog signal and stabilized by a push-pull output stage.
The D/A-READOUT at any given magnetic field depends on the programmed magnetic
field range, the low-pass filter, SENSITIVITY, VOQ, TC values and CLAMP-LOW and
CLAMP-HIGH. The D/A-READOUT range is min. 0 and max. 16383.
Note
During application design, it should be taken into consideration that the
maximum and minimum D/A-READOUT should not violate the error band
of the operational range.
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HAL 83xP
DATA SHEET
MODE register
The MODE register contains all bits used to configure the A/D converter and the different
output modes.
Table 3–1: MODE register of HAL 830P / HAL 835P
MODE
Bit Number
9
8
7
6
Parameter
RANGE
Reserved
OUTPUTMODE
5
4
3
FILTER
2
1
RANGE
(together
with bit 9)
0
Reserved
Magnetic Range
The RANGE bits define the magnetic field range of the A/D converter.
Table 3–2: Magnetic Range HAL 835P
Magnetic Range
RANGE
MODE
MODE [9]
MODE [2:1]
15 mT
1
00
30 mT
0
00
60 mT
0
01
80 mT
0
10
100 mT
0
11
150 mT
1
11
Table 3–3: Magnetic Range HAL 830P
Magnetic Range
RANGE
MODE [9]
MODE [2:1]
30 mT
0
00
60 mT
0
01
80 mT
0
10
100 mT
0
11
150 mT
1
11
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HAL 83xP
DATA SHEET
Filter
The FILTER bits define the 3 dB frequency of the digital low-pass filter.
Table 3–4: FILTER bits defining the3 dB frequency
3 dB Frequency
MODE [4:3]
80 Hz
00
500 Hz
10
1 kHz
11
2 kHz
01
Output Format
The OUTPUTMODE bits define the different output modes of HAL 83xP.
Table 3–5: OUTPUTMODE for HAL 835P
Output Format
MODE [7:5]
Analog Output (12 bit)
000
Multiplex Analog Output (continuously)
001
Multiplex Analog Output (external trigger)
011
Burn-In Mode
010
PWM
110
PWM (inverted polarity)
111
Table 3–6: OUTPUTMODE for HAL 830P
Output Format
MODE [7:5]
Analog Output (12 bit)
000
In Analog Output mode the sensor provides an ratiometric 12 bit analog output voltage
between 0 V and 5 V.
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HAL 83xP
DATA SHEET
In Multiplex Analog Output mode the sensor delivers two analog 7-bit values. The 7 LSB
(least significant bits) and the 7 MSB of the output value are transmitted separately. This
enables the sensor to transmit a 14-bit signal to the 8-bit A/D converter of an ECU with the
advantage of achieving a higher signal-to-noise ratio in a disturbed environment.
– In external trigger mode the ECU can switch the output of the sensor between LSB and
MSB by changing the current flow direction through the sensor’s output. In case the output is pulled up by a 10 k resistor, the sensor sends the MSB. If the output is pulled
down, the sensor will send the LSB. Maximum refresh rate is about 500 Hz (2 ms).
– In continuous mode the sensor transmits first LSB and then MSB continuously and
the ECU must listen to the data stream sent by the sensor.
In the Multiplex Analog Output mode 1 LSB is represented by a voltage level change of
39 mV. In Analog Output mode with14 bit 1 LSB would be 0.31 mV.
In Burn-In Mode the signal path of the sensors DSP is stimulated internally without applied
magnetic field. In this mode the sensor provides a “saw tooth” shape output signal. Shape
and frequency of the saw tooth signal depend on the programming of the sensor.
This mode can be used for Burn-In test in the customers production line.
In PWM mode the sensor provides an 11 bit PWM output. The PWM period is 8 ms and
the output signal will change between 0 V and 5 V supply voltage. The magnetic field
information is coded in the duty cycle of the PWM signal. The duty cycle is defined as
the ratio between the high time “s” and the period “d” of the PWM signal (see Fig. 3–6).
Note
The PWM signal is updated with the rising edge. If the duty cycle is evaluated
with a microcontroller, the trigger-level for the measurement value should be
the falling edge. Please use the rising edge to measure the PWM period.
For PWM (inverted) the duty-cycle value is then inverted. Meaning that a 70% dutycycle in normal PWM mode is 30% duty-cycle in PWM (inverted) mode.
Out
Vhigh
d
s
Vlow
Update
time
Fig. 3–6: Definition of PWM signal
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HAL 83xP
DATA SHEET
TC Register
The temperature dependence of the magnetic sensitivity can be adapted to different
magnetic materials in order to compensate for the change of the magnetic strength with
temperature. The adaptation is done by programming the TC (Temperature Coefficient)
and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and
the curvature of the temperature dependence of the magnetic sensitivity can be
matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be constant over the full temperature range. The sensor can compensate
for linear temperature coefficients ranging from about 3100 ppm/K up to 1000 ppm/K
and quadratic coefficients from about 7 ppm/K² to 2 ppm/K².
The full TC range is separated in the following four TC range groups (see Table 3–7
and Table 5–1 on page 40).
Table 3–7: TC-Range Groups
TC-Range [ppm/k]
TC-Range Group
(see also Table 5–1 on page 40)
3100 to 1800 (not for 15mT range)
0
1750 to 550 (not for 15mT range)
2
500 to +450 (default value)
1
+450 to +1000
3
TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four
ranges. For example 0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ = 1. Please
refer to Section 5.3. for more details.
Sensitivity
The SENSITIVITY register contains the parameter for the multiplier in the DSP. The
Sensitivity is programmable between 4 and 4. For VSUP = 5 V, the register can be
changed in steps of 0.00049.
For all calculations, the digital value from the magnetic field of the D/A converter is
used. This digital information is readable from the D/A-READOUT register.
V OUT 16383
SENSITIVITY = ------------------------------------------------------------------- Sens INITIAL
D/A-READOUT V DD
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HAL 83xP
DATA SHEET
VOQ
The VOQ register contains the parameter for the adder in the DSP. VOQ is the output
signal without external magnetic field (B = 0 mT) and programmable from VSUP
(100% duty-cycle) up to VSUP (100% duty-cycle). For VSUP = 5 V, the register can
be changed in steps of 4.9 mV (0.05% duty-cycle).
Note: If VOQ is programmed to a negative value, the maximum output signal is limited to:
V OUTmax = V OQ + V SUP
Clamping Levels
The output signal range can be clamped in order to detect failures like shorts to VSUP or
GND or an open circuit.
The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping limit is programmable between 0 V (min. duty-cycle) and VSUP/2 (50% duty-cycle).
For VSUP = 5 V, the register can be changed in steps of 9.77 mV (0.195% duty-cycle).
The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V (min. duty-cycle) and VSUP (max. duty-cycle).
For VSUP = 5 V, in steps of 9.77 mV (0.195% duty-cycle).
GP Register
The register GP0 to GP 3 can be used to store some information, like production date or
customer serial number. TDK-Micronas will store production Lot number, wafer number
and x,y coordinates in registers GP1 to GP3. The total register contains of four blocks with
a length of 13 bit each.The customer can read out this information and store it in his production data base for reference or he can store own production information instead.
Note
This register has no redundancy (and guarantee is limited) for traceability.
To read/write this register it is mandatory to read/write all GP register one
after the other starting with GP0. In case of writing the registers it is necessary to first write all registers followed by one store sequence at the end.
Even if only GP0 should be changed all other GP registers must first be
read and the read out data must be written again to these registers.
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HAL 83xP
DATA SHEET
LOCK
By setting the 1-bit register all registers will be locked and the sensor will no longer
respond to any supply voltage modulation. This bit is active after the first power-off and
power-on sequence after setting the LOCK bit. EMC properties of the HAL 83xP is only
guaranteed for locked devices.
Warning
This register cannot be reset!
D/A-READOUT
This 14-bit register delivers the actual digital value of the applied magnetic field after the
signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment.
Note
The MSB and LSB are reversed compared with all the other registers.
Please reverse this register after readout.
Note
HAL 835P: During calibration it is mandatory to select the Analog Output as
output format. The D/A-Readout register can be read out only in the Analog
Output mode. For all other modes the result read back from the sensor will
be a 0. After the calibration the output format can than easily be switched to
the wanted output mode, like PWM.
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HAL 83xP
DATA SHEET
3.4. Calibration Procedure
3.4.1. General Procedure
For calibration in the system environment, the application kit from TDK-Micronas is
recommended. It contains the hardware for generation of the serial telegram for programming (Programmer Board Version 5.1) and the corresponding software (PC83x)
for the input of the register values.
For the individual calibration of each sensor in the customer application, a two point
adjustment is recommended. The calibration shall be done as follows:
Step 1: Input of the registers which need not be adjusted individually
The magnetic circuit, the magnetic material with its temperature characteristics, the filter
frequency, the output mode and the GP register value are given for this application.
Therefore, the values of the following register blocks should be identical for all sensors
of the customer application.
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the sensor position)
– OUTPUTMODE
– TC, TCSQ and TC-RANGE
(depends on the material of the magnet and the other temperature dependencies of the
application)
– GP
(if the customer wants to store own production information. It is not necessary to change
this register)
As the clamping levels are given. They have an influence on the D/A-Readout value
and have to be set therefore after the adjustment process.
Write the appropriate settings into the HAL 83xP registers.
TDK-Micronas GmbH
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HAL 83xP
DATA SHEET
Step 2: Initialize DSP
As the D/A-READOUT register value depends on the settings of SENSITIVITY, VOQ and
CLAMP-LOW/HIGH, these registers have to be initialized with defined values, first:
– VOQINITIAL = 2.5 V
– Clamp-Low = 0 V
– Clamp-High = 4.999 V
– SensINITIAL (see Table 3–8)
Table 3–8: SensINITIAL
3dB Filter frequency
SensINITIAL
80 Hz
0.464
500 Hz
0.3
1 kHz
0.321
2 kHz
0.641
Step 3: Define Calibration Points
The calibration points 1 and 2 can be set inside the specified range. The corresponding
values for VOUT1 and VOUT2 result from the application requirements.
LowClampingVoltage V OUT1,2 HighClampingVoltage
For highest accuracy of the sensor, calibration points near the minimum and maximum
input signal are recommended. The difference of the output voltage between calibration
point 1 and calibration point 2 should be more than 3.5 V.
TDK-Micronas GmbH
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HAL 83xP
DATA SHEET
Step 4: Calculation of VOQ and Sensitivity
Set the system to calibration point 1 and read the register D/A-READOUT. The result is
the value D/A-READOUT1.
Now, set the system to calibration point 2, read the register D/A-READOUT again, and
get the value D/A-READOUT2.
With these values and the target values VOUT1 and VOUT2, for the calibration points 1
and 2, respectively, the values for Sensitivity and VOQ are calculated as:
Vout2 – Vout1
16383
Sensitivity = Sens INITIAL --------------------------------------------------------------------------------- -------------- D/A-Readout2 – D/A-Readout1
5
Sensitivity
5 D/A-Readout2
Voq = Vout2 – -------------------------------------------- – Voq INITIAL -------------------------------------------
Sensitivity
16383
INITIAL
This calculation has to be done individually for each sensor.
Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the
sensor. At that time it is also possible to store the application specific values for Clamp-Low
and Clamp-High into the sensors EEPROM.The sensor is now calibrated for the customer
application. However, the programming can be changed again and again if necessary.
Note
For a recalibration, the calibration procedure has to be started at the beginning (step 1). A new initialization is necessary, as the initial values from
step 1 are overwritten in step 4.
Step 5: Locking the Sensor
The last step is activating the LOCK function by programming the LOCK bit. Please
note that the LOCK function becomes effective after power-down and power-up of the
Hall IC. The sensor is now locked and does not respond to any programming or reading
commands.
Note
It is mandatory to lock the sensor.
Warning
This register can not be reset!
TDK-Micronas GmbH
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HAL 83xP
DATA SHEET
4. Specifications
4.1. Outline Dimensions
5° aro
un
d
Product
HAL 830/835/1002
14.7B0.2
short lead
L
gate remain
standard
1.5
Y
A
0.295B0.09
D
0.3
45°
L
D
center of
sensitive area
4.06 B0.05
1.5 B0.05
1 +0.2
0.7
4.2 max.
4.05 B0.05
Y
1.5
ejector pin Ø1.5
A
2
3
aroun
1
1 B0.2
5°
0.5 +- 0.1
0.08
d
L
0.36 B0.05
Sn plated
0 - 0.5
solder or welding area
dambar cut,
not Sn plated (6x)
0.43 B0.05
Sn plated
1.27 B0.4 1.27 B0.4
2.54
lead length,
not Sn plated (3x)
0
2.5
5 mm
scale
All dimensions are in mm.
Physical dimensions do not include moldflash.
Sn-thickness might be reduced by mechanical handling.
PACKAGE
ISSUE DATE
JEDEC STANDARD
(YY-MM-DD)
ITEM NO.
TO92UT-2
17-04-21
FRONT VIEW
ANSI
REVISION DATE
(YY-MM-DD)
REV.NO.
BACK VIEW
DRAWING-NO.
SPECIFICATION
TYPE
ISSUE
19-02-14
3
CUTI00032501.1
ZG
NO.
2081_Ver.03
c Copyright 2017 TDK-Micronas GmbH, all rights reserved
Fig. 4–1:
TO92UT-2 Plastic Transistor Standard UT package, 3 leads, non-spread
TDK-Micronas GmbH
May 12, 2021; DSH000214_001EN
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HAL 83xP
DATA SHEET
Product
5°
gate remain
HAL 830/835/1002
14.7B0.2
short lead
L
standard
1.5
Y
A
0.295B0.09
D
0.3
45°
L
D
center of
sensitive area
4.06 B0.05
1 +0.2
1.5 B0.05
ejector pin Ø1.5
4.05 B0.05
4.2 max.
Y
1.5
0.7
2
1 B0.2
1
5° aroun
d
0.5 +- 0.1
0.08
A
3
L
solder or welding area
2-4
dambar cut,
not Sn plated (6x)
0-0,5
0.36 B0.05
Sn plated
0.43 B0.05
Sn plated
2.54 B0.4
2.54 B0.4
lead length cut
not Sn plated (3x)
0
2.5
5 mm
scale
All dimensions are in mm.
Physical dimensions do not include moldflash.
Sn-thickness might be reduced by mechanical handling.
PACKAGE
ISSUE DATE
JEDEC STANDARD
(YY-MM-DD)
ITEM NO.
TO92UT-1
17-12-11
BACK VIEW
FRONT VIEW
ANSI
REVISION DATE
(YY-MM-DD)
REV.NO.
DRAWING-NO.
SPECIFICATION
TYPE
ISSUE
19-02-14
2
CUTS00031031.1
ZG
NO.
2087_Ver.02
c Copyright 2017 TDK-Micronas GmbH, all rights reserved
Fig. 4–2:
TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread
TDK-Micronas GmbH
May 12, 2021; DSH000214_001EN
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HAL 83xP
DATA SHEET
Δh
Δp
Δh
W2
B
A
W0
W
L
W1
H
H1
Δp
D0
P2
F1
feed direction
P0
F2
T1
T
view A-B
H
all dimensions in mm
Short leads
Long leads
max. allowed tolerance over 20 hole spacings ±1.0
H1
18 - 20
24 - 26
TO92UA
21 - 23.1
27 - 29.1
TO92UT
22 - 24.1
28 - 30.1
other dimensions see drawing of bulk
UNIT
D0
F1
F2
Δh
L
P0
P2
Δp
T
T1
W
W0
W1
W2
mm
4.0
2.74
2.34
2.74
2.34
±1.0
11.0
max
13.2
12.2
7.05
5.65
±1.0
0.5
0.9
18.0
6.0
9.0
0.3
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
ICE 60286-2
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
16-07-18
06632.0001.4
ZG001032_Ver.06
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–3:
TO92UA/UT: Dimensions ammopack inline, spread
TDK-Micronas GmbH
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HAL 83xP
DATA SHEET
Δh
Δp
Δp
W2
B
A
W1
W
L
W0
H
H1
Δh
D0
P2
F1
feed direction
P0
F2
T1
T
view A-B
H
all dimensions in mm
Short leads
Long leads
max. allowed tolerance over 20 hole spacings ±1.0
H1
18 - 20
24 - 26
TO92UA
21 - 23.1
27 - 29.1
22 - 24.1
28 - 30.1
other dimensions see drawing of bulk
TO92UT
UNIT
D0
F1
F2
Δh
L
P0
P2
Δp
T
T1
W
W0
W1
W2
mm
4.0
1.47
1.07
1.47
1.07
±1.0
11.0
max
13.2
12.2
7.05
5.65
±1.0
0.5
0.9
18.0
6.0
9.0
0.3
STANDARD
ANSI
ISSUE
ITEM NO.
-
IEC 60286-2
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
16-07-18
06631.0001.4
ZG001031_Ver.05
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–4:
TO92UA/UT: Dimensions ammopack inline, not spread
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HAL 83xP
DATA SHEET
4.2. Soldering, Welding and Assembly
Information related to solderability, welding, assembly, and second-level packaging is
included in the document “Guidelines for the Assembly of Micronas Packages”.
It is available on the TDK-Micronas website (https://www.micronas.com/en/service-center/
downloads) or on the service portal (https://service.micronas.com).
4.3. Pin Connections and Short Descriptions
Table 4–1: Pin Connection and Short Description
Pin No.
Pin Name
Type
Short Description
1
VSUP
SUPPLY
Supply Voltage and Programming Pin
2
GND
GND
Ground
3
OUT
I/O
Push-Pull Output and Selection Pin
1
VSUP
OUT
3
2
GND
Fig. 4–5: Pin configuration
4.4. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
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HAL 83xP
DATA SHEET
4.5. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only. Functional operation of the device at
these conditions is not implied. Exposure to absolute maximum rating conditions for
extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to
high static voltages or electric fields; however, it is advised that normal precautions be
taken to avoid application of any voltage higher than absolute maximum-rated voltages
to this circuit.
All voltages listed are referenced to ground (GND).
Table 4–2: Absolute Maximum Ratings
Symbol
Parameter
Pin
No.
Min.
Max.
Unit
Condition
VSUP
Supply Voltage
1
8.5
8.5
V
t < 96 h3)4)
VSUP
Supply Voltage
1
16
16
V
t < 1 h3)4)
VOUT
Output Voltage
3
5
16
V
VOUT VSUP
Excess of Output Voltage
over Supply Voltage
3,1
2
V
IOUT
Continuous Output Current
3
10
10
mA
tSh
Output Short Circuit Dura- 3
tion
10
min
VESD
ESD Protection1)
8
7.5
8
7.5
kV
TJ
Junction Temperature
under bias2)
50
190
°C
tNVMLife
EEPROM
25
years TA = 85°C
Tstorage
Transportation/Short Term
Storage Temperature
55
150
°C
1)
2)
3)
4)
1
3
Device only without
packing material
AEC-Q100-002 (100 pF and 1.5 k)
For 96 h - Please contact TDK-Micronas for other temperature requirements
No cumulated stress
As long as TJ is not exceeded
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HAL 83xP
DATA SHEET
4.6. Storage and Shelf Life
Information related to storage conditions of Micronas sensors is included in the document
“Guidelines for the Assembly of Micronas Packages”. It gives recommendations linked to
moisture sensitivity level and long-term storage.
It is available on the TDK-Micronas website (https://www.micronas.com/en/service-center/
downloads) or on the service portal (https://service.micronas.com).
4.7. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended
Operating Conditions/Characteristics” is not implied and may result in unpredictable
behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Table 4–3: Recommended Operating Conditions
Symbol Parameter
VSUP
Supply Voltage
Pin No. Min.
Typ.
Max.
Unit
1
4.5
12.4
5
12.5
5.5
12.6
V
Condition
During programming
IOUT
Continuous Output
Current
3
1.2
1.2
mA
RL
Load Resistor
3
4.5
10
k
Can be pull-up or
pull-down resistor
CL
Load Capacitance
3
0
100
1000
nF
Analog output only
CP
Protection Capacitor
1-2
0.33
100
2700
nF
NPRG
Number of EEPROM
Programming Cycles
100
cycles 0°C < Tamb < 55°C
TJ
Junction Temperature
Range1)
40
40
40
125
150
170
°C
°C
°C
1)
2)
for 8000 h2)
for 2000 h2)
for 1000 h2)
Depends on the temperature profile of the application. Please contact TDK-Micronas for life time calculations.
Time values are not cumulative
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HAL 83xP
DATA SHEET
4.8. Characteristics
at TJ = 40 °C to 170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column
“Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Table 4–4: Characteristics
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
ISUP
Supply Current
over Temperature Range
1
5
7
10
mA
ROUT
Output Resistance over
Recommended Operating
Range
3
1
10
Conditions
General
VOUTLmax VOUT VOUTHmin
Guaranteed by Design
100% tested
fOSC
Oscillator Frequency
110
128
150
kHz
512 kHz internally
100% tested
BW
Small Signal Bandwidth (3 dB)
3
2
kHz
BAC < 10 mT;
3 dB Filter frequency = 2 kHz
Basics
VOQ
Voltage at Output Quiet Mode
3
2.46
2.48
2.5
V
B = 0 mT, IOUT = 0 mA, TJ = 25 °C
f3dB = 1000 Hz, BRange = 30 mT,
Voq = 2.5 V, Sensitivity = 0.6
unadjusted sensor
delivery status
based on characterisation
Sensitivity
3
80
90
100
mV/mT
With SENSITIVITY = 1
Voq = 2.5 V
Magnetic range = ±60mT
3 dB frequency = 500 Hz
TC =15
TCSQ = 1
TC-Range = 500 ... +450 ppm/K
Overall Performance
INL
0.5
Non-Linearity of Output Voltage
over Temperature
3
0
0.5
%
Dev-VOUT
Deviation of Output Voltage
over Temperature
3
30
0
30
mV
VOUTn
Noise Output VoltageRMS
3
0.6
1.4
mV
% of supply voltage1)
For VOUT = 0.35 V ... 4.65 V;
VSUP = 5 V, Sensitivity 0.95
Magnetic range = 60 mT
3 dB Filter frequency = 500 Hz
Sensitivity 0.7; C = 4.7 nF (VSUP
& VOUT to GND) based on characterisation
ER
Ratiometric Error of Output
over Temperature
(Error in VOUT / VSUP)
3
0.25
0
0.25
%
VOUT1 VOUT2> 2 V
during calibration procedure
1)
If more than 50% of the selected magnetic field range is used (Sensitivity 0.5) and the temperature compensation is suitable.
INL = VOUT VOUTLSF = Least Square Fit Line voltage based on VOUT measurements at a fixed temperature.
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HAL 83xP
DATA SHEET
Table 4–4: Characteristics, continued
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
Resolution
3
12
bit
Ratiometric to VSUP 2)
Differential Non-Linearity of D/A
Converter3)
3
2.0
1.5
0
0
2.0
1.5
LSB
HAL 830P
HAL 835P
DAC
DNL
Only @ 25°C ambient temperature
Drift over temperature
ES
Error in Magnetic Sensitivity
over Temperature Range4)
3
4
1
0
0
4
1
%
HAL 830P
HAL 835P
VSUP = 5 V; 60 mT range,
3 dB frequency = 500 Hz,
TC & TCSQ for linearized
temperature coefficients
(see Section Table 4–5: on
page 32)
VOffset
Offset Drift over Temperature
Range
3
0.6
0.2
0.25
0.1
0.6
0.2
VOUT(B = 0 mT)25°C
VOUT(B = 0
%
VSUP
HAL 830P
HAL 835P
VSUP = 5 V; 60 mT range,
mT)max4)
3 dB frequency = 500 Hz,
TC = 15, TCSQ = 1, TC-Range = 1
0.65 < sensitivity < 0.65
2)
3)
4)
Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096
Only tested at 25°C. The specified values are test limits only. Overmolding and packaging might influence this parameter
Tambient = 150°C
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HAL 83xP
DATA SHEET
4.8.1. Additional Information
Table 4–5: Additional Information
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
3.0
1.5
1.1
0.9
3.5
1.75
1.3
1.05
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2kHz
General
tr(O)
Step Response Time of Output1) 3
CL = 10 nF, time to 90% of final output voltage for a steplike
Signal Bstep from 0 mT to Bmax
tPOD
Power-Up Time (Time to reach
stable Output Voltage)
1.5
1.7
1.9
PORUP
Power-On Reset Voltage (UP)
3.4
V
PORDOWN
Power-On Reset Voltage
(DOWN)
3.0
V
Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range
3
15
0
15
VOUTCH
Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range
3
15
0
15
mV
VOUTH
Upper Limit of Signal Band2)
3
4.65
4.8
V
VOUTL
2)
3
0.2
0.35
V
3
40
ms
CL = 10 nF, 90% of VOUT
mV
RL = 5 k, VSUP = 5 V
DAC
VOUTCL
DACGE
1)
Lower Limit of Signal Band
D/A-Converter Glitch Energy
nV
Spec values are derived from resolutions of the registers Clamp-Low/
Clamp-High and the parameter
Voffset
VSUP = 5 V, 1 mA IOUT 1mA
VSUP = 5 V, 1 mA IOUT 1mA
3)
Guaranteed by design
Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH
The energy of the impulse injected into the analog output when the code in the D/A-Converter register changes state. This energy is
normally specified as the area of the glitch in nVs
2)
Signal
3)
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HAL 83xP
DATA SHEET
4.8.2. PWM Output (HAL 835P only)
Table 4–6: PWM Output (HAL 835P only)
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Resolution
3
11
bit
Accuracy of Duty Cycle at
Clamp Low over Temperature
Range
3
0.3
0
0.3
%
DCMAXDUTY
Accuracy of Duty Cycle at
Clamp High over Temperature
Range
3
0.3
0
0.3
%
VOUTH
Output High Voltage
3
4.8
V
VSUP = 5 V, 1 mA IOUT 1mA
VOUTL
Output Low Voltage
3
0.2
V
VSUP = 5 V, 1 mA IOUT 1mA
fPWM
PWM Output Frequency over
Temperature Range
3
105
125
145
Hz
tPOD
Power-Up Time (Time to reach
valid Duty Cycle)
3
8.5
ms
tr(O)
Step Response Time of Output
3
3
0,9
0,6
0,4
13
1,2
0.8
0,5
ms
DCMINDUTY
Conditions
Spec values are derived from
resolutions of the registers ClampLow/Clamp-High and the parameter DCOQoffset
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2kHz
Time to 90% of final output voltage
for a steplike signal Bstep from 0
mT to Bmax
4.8.3. TO92UT Packages
Table 4–7: TO92UT Packages
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
Thermal Resistance
Rthja
junction to air
235
K/W
Determined with a 1s0p board
Rthjc
junction to case
61
K/W
Determined with a 1s0p board
4.8.4. Definition of sensitivity error ES
ES is the maximum of the absolute value of the quotient of the normalized measured
value1 over the normalized ideal linear2 value minus 1:
meas
ES = max abs ------------- – 1
ideal
{Tmin, Tmax}
In the example below, the maximum error occurs at 10°C:
1.001
ES = ------------- – 1 = 0.8%
0.993
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HAL 83xP
DATA SHEET
1
:
2
normalized to achieve a least-squares method straight line that has a value of 1 at 25°C
: normalized to achieve a value of 1 at 25°C
ideal 200 ppm/k
1.03
relative sensitivity related to 25 °C value
least-square-fit straight-line of
normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-square-fit
straight-line at 25 °C
1.02
1.01
1.001
1.00
0.992
0.99
0.98
–50
–25
-10
0
25
50
75 100
temperature [°C]
125
150
175
ES definition example
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HAL 83xP
DATA SHEET
4.8.5. Power-On Operation
at TJ = 40 °C to 170 °C, after programming and locking. Typical Characteristics for
TJ = 25 °C.
Table 4–8: Power-On Operation
Symbol
Parameter
Min.
Typ.
Max.
Unit
PORUP
Power-On Reset Voltage (UP)
3.4
V
PORDOWN
Power-On Reset Voltage (DOWN)
3.0
V
97%VSUP
Vout [V]
97%VSUP
97%VSUP
Ratiometric Output
3.5 V
VSUP,UV
5
VSUP,OV
VSUP [V]
: Output Voltage undefined
VSUP,UV = Undervoltage Detection Level
VSUP,OV = Overvoltage Detection Level
Fig. 4–6: Analog output behavior for different supply voltages
VSUP
First PWM starts
5V
4.2 V
VSUP,UVmin.
time
tPOD
VOUT
Output undefined
The first period contains
no valid data
No valid signal
time
Valid signal
Fig. 4–7: Power-up behavior of HAL 835P with PWM output activated
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HAL 83xP
DATA SHEET
4.9. Diagnostics and Safety Features
4.9.1. Overvoltage and Undervoltage Detection
at TJ = 40 °C to 170 °C, Typical Characteristics for TJ = 25 °C, after programming and
locking
Table 4–9: Over-/Undervoltage Detection
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Test Conditions
VSUP,UV
Undervoltage detection level
1
4.2
4.5
V
1)2)
VSUP,OV
Overvoltage detection level
1
8.5
8.9
10.0
V
1)2)
1)
If the supply voltage drops below VSUP,UV or rises above VSUP,OV, the output voltage is switched to VSUP (97% of VSUP at RL = 10 k
to GND).
2)
If the PWM output of HAL 835P is activated, then the output signal will follow VSUP and PWM signal is switched off
Note
The over- and undervoltage detection is activated only after locking the sensor!
4.9.2. Open-Circuit Detection
at TJ = 40 °C to 170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor.
Table 4–10: Open-Circuit Detection
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Comment
VOUT
Output voltage at open
VSUP line
3
0
0
0.15
V
VSUP = 5 V
RL = 10 kto 200k
0
0
0.2
V
VSUP = 5 V
5 kRL < 10 k
0
0
0.25
V
VSUP = 5 V
4.5 kRL < 10 k1)
VOUT
Output voltage at open
GND line
3
4.85
4.9
5.0
V
VSUP = 5 V
RL = 10 kto 200k
4.8
4.9
5.0
V
VSUP = 5 V
5 kRL < 10 k
4.75
4.9
5.0
V
VSUP = 5 V
4.5 kRL < 10 k1)
1)
Characterize on small sample size, not tested.
Note
In case that the PWM output mode is used the sensor will stop transmission of the PWM signal if VSUP or GND lines are broken and VOUT will be
according to above table.
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DATA SHEET
4.9.3. Overtemperature and Short-Circuit Protection
If overtemperature >180 °C or a short-circuit occurs, the output will be switched off and
goes in high impedance conditions.
4.9.4. EEPROM Redundancy
The non-volatile memory except the GP registers uses the Micronas Fail Safe Redundant Cell technology well proven in automotive applications.
4.9.5. ADC Diagnostic
The A/D-READOUT register can be used to avoid under/overrange effects in the A/D
converter.
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DATA SHEET
5. Application Notes
5.1. Application Circuit (for analog output mode only)
For EMC protection, it is recommended to connect one ceramic 100 nF capacitor each
between ground and the supply voltage, respectively the output voltage pin.
Please note that during programming, the sensor will be supplied repeatedly with the
programming voltage of 12.5 V for 100 ms. All components connected to the VSUP line
at this time must be able to resist this voltage.
VSUP
OUT
HAL83xP
100 nF
100 nF
GND
Fig. 5–1: Recommended application circuit (analog output signal)
VSUP
OUT
HAL83xP
100 nF
100 nF
GND
Fig. 5–2: Recommended application circuit (PWM output signal)
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5.2. Use of two HAL 83xP in Parallel (for analog output mode only)
Two different HAL 83xP sensors which are operated in parallel to the same supply and
ground line can be programmed individually. In order to select the IC which should be
programmed, both Hall ICs are inactivated by the “Deactivate” command on the common
supply line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only
the activated sensor will react to all following read, write, and program commands. If the
second IC has to be programmed, the “Deactivate” command is sent again, and the
second IC can be selected.
Note
The multi-programming of two sensors requires a 10 k pull-down resistor
on the sensors output pins.
VSUP
OUT A & Select A
100 nF
HAL83xP
Sensor A
100 nF
HAL83xP
Sensor B
OUT B & Select B
100 nF
GND
Fig. 5–3: Recommended Application circuit (parallel operation of two HAL 83xP)
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DATA SHEET
5.3. Temperature Compensation
The relationship between the temperature coefficient of the magnet and the corresponding
TC, TCSQ and TC-Range codes for linear compensation is given in the following table. In
addition to the linear change of the magnetic field with temperature, the curvature can be
adjusted as well. For this purpose, other TC, TCSQ and TC-Range combinations are
required which are not shown in the table. Please contact TDK-Micronas for more detailed
information on this higher order temperature compensation.
Table 5–1: Temperature Compensation
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
Group
TC
TCSQ
1075
3
31
7
1000
3
28
1
900
3
24
0
750
3
16
2
675
3
12
2
575
3
8
2
450
3
4
2
400
1
31
0
250
1
24
1
150
1
20
1
50
1
16
2
0
1
15
1
100
1
12
0
200
1
8
1
300
1
4
4
400
1
0
7
500
1
0
0
600
2
31
2
700
2
28
1
800
2
24
3
900
2
20
6
1000
2
16
7
1100
2
16
2
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Table 5–1: Temperature Compensation, continued
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
Group
TC
TCSQ
1200
2
12
5
1300
2
12
0
1400
2
8
3
1500
2
4
7
1600
2
4
1
1700
2
0
6
1800
0
31
6
1900
0
28
7
2000
0
28
2
2100
0
24
6
2200
0
24
1
2400
0
20
0
2500
0
16
5
2600
0
14
5
2800
0
12
1
2900
0
8
6
3000
0
8
3
3100
0
4
7
3300
0
4
1
3500
0
0
4
Note
The above table shows only some approximate values. TDK-Micronas recommends to use the TC-Calc software to find optimal settings for temperature coefficients. Please contact TDK-Micronas for more detailed information.
Note
Please be aware that TC-Range Group 0 and 2 are not valid in the 15 mT
magnetic range.
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DATA SHEET
5.4. Ambient Temperature
Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA).
TJ = TA + T
At static conditions and continuous operation, the following equation applies:
T = ISUP * VSUP * RthjX
The X represents junction-to-air or junction-to-case.
In order to estimate the temperature difference T between the junction and the respective
reference (e.g. air, case, or solder point) use the max. parameters for ISUP, RthX, and the
max. value for VSUP from the application.
The following example shows the result for junction-to -air conditions. VSUP = 5.5 V,
Rthja = 250 K/W and ISUP = 10 mA the temperature difference T = 13.75 K.
The junction temperature TJ is specified. The maximum ambient temperature TAmax can
be estimated as:
TAmax = TJmax T
5.5. EMC and ESD
Please contact TDK-Micronas for the detailed investigation reports with the EMC and
ESD results.
EMC results are only valid for locked devices.
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DATA SHEET
6. Programming
6.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The
sensor answers with a serial telegram on the output pin.
The bits in the serial telegram have a different bit time for the VSUP-line and the output.
The bit time for the VSUP-line is defined through the length of the Sync Bit at the beginning
of each telegram. The bit time for the output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as
a voltage change between 50% and 80% of the bit time. After each bit, a voltage
change occurs.
6.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the
Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP).
There are 4 kinds of telegrams:
– Write a register (see Fig. 6–2)
After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is
valid and the command has been processed, the sensor answers with an Acknowledge
Bit (logical 0) on the output.
– Read a register (see Fig. 6–3)
After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data
Bits, and the Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 6–4)
After evaluating this command, the sensor answers with the Acknowledge Bit. After
the delay time tw, the supply voltage rises up to the programming voltage.
– Activate a sensor (see Fig. 6–5)
If more than one sensor is connected to the supply line, selection can be done by first
deactivating all sensors. The output of all sensors have to be pulled to ground. With
an Activate pulse on the appropriate output pin, an individual sensor can be selected.
All following commands will only be accepted from the activated sensor.
tr
tf
VSUPH
tp0
logical 0
tp0
or
VSUPL
tp1
VSUPH
tp0
logical 1
VSUPL
tp0
or
tp1
Fig. 6–1: Definition of logical 0 and 1 bit
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Table 6–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
Remarks
VSUPL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VSUPH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise time
1
0.05
ms
see Fig. 6–1 on page 43
tf
Fall time
1
0.05
ms
see Fig. 6–1 on page 43
tp0
Bit time on VSUP
1
1.7
1.8
1.9
ms
tp0 is defined through the Sync Bit
tpOUT
Bit time on output pin
3
2
3
4
ms
tpOUT is defined through the Acknowledge Bit
tp1
Duty-Cycle Change for logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VSUPPROG
Supply Voltage for
Programming the EEPROM
1
12.4
12.5
12.6
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
trp
Rise time of programming voltage
1
0.2
0.5
1
ms
see Fig. 6–1 on page 43
tfp
Fall time of programming voltage
1
0
1
ms
see Fig. 6–1 on page 43
tw
Delay time of programming voltage after
Acknowledge
1
0.5
0.7
1
ms
Vact
Voltage for an Activate pulse
3
3
4
5
V
tact
Duration of an Activate pulse
3
0.05
0.1
0.2
ms
Vout,deact
Output voltage after deactivate command
3
0
0.1
0.2
V
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VSUP
Acknowledge
VOUT
Fig. 6–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
DAT
DP
VOUT
Fig. 6–3: Telegram for coding a Read command
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DATA SHEET
tPROG
trp
tfp
VSUPPROG
ERASE, PROM, and LOCK
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
VOUT
tw
Fig. 6–4: Telegram for coding the EEPROM programming
VACT
tr
tACT
tf
VOUT
Fig. 6–5: Activate pulse
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DATA SHEET
6.3. Telegram Codes
Sync Bit
Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for tp0.
Command Bits (COM)
The Command code contains 3 bits and is a binary number. Table 6–2 shows the available
commands and the corresponding codes for the HAL 83xP.
Command Parity Bit (CP)
This parity bit is “1” if the number of zeros within the 3 Command Bits is uneven. The
parity bit is “0”, if the number of zeros is even.
Address Bits (ADR)
The Address code contains 4 bits and is a binary number. Table 6–3 shows the available
addresses for the HAL 83xP registers.
Address Parity Bit (AP)
This parity bit is “1” if the number of zeros within the 4 Address bits is uneven. The parity
bit is “0” if the number of zeros is even.
Data Bits (DAT)
The 14 Data Bits contain the register information.
The registers use different number formats for the Data Bits. These formats are
explained in Section 6.4.
In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is
written, only the last 10 bits are valid.
In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is
read, only the first 10 bits are valid.
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the binary number is even. The parity
bit is “0” if the number of zeros is uneven.
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Acknowledge
After each telegram, the output answers with the Acknowledge signal. This logical “0”
pulse defines the exact timing for tpOUT.
Table 6–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all non-volatile registers
ERASE
5
erase all non-volatile registers
6.4. Number Formats
Binary number:
The most significant bit is given as first, the least significant bit as last digit.
Example: 101001 represents 41 decimal.
Signed binary number:
The first digit represents the sign of the following binary number (1 for negative, 0 for
positive sign).
Example: 0101001 represents +41 decimal
1101001 represents 41 decimal
Two’s-complement number:
The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add “1”.
Example: 0101001 represents +41 decimal
1010111 represents 41 decimal
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6.5. Register Information
CLAMP-LOW
– The register range is from 0 up to 255.
– The register value is calculated by:
LowClampingVoltage 2
CLAMP-LOW = --------------------------------------------------------------- 255
V SUP
CLAMP-HIGH
– The register range is from 0 up to 511.
– The register value is calculated by:
HighClampingVoltage
CLAMP-HIGH = ------------------------------------------------------ 511
V SUP
VOQ
– The register range is from 1024 up to 1023.
– The register value is calculated by:
V OQ
VOQ = ------------- 1024
V SUP
SENSITIVITY
– The register range is from 8192 up to 8191.
– The register value is calculated by:
SENSITIVITY = Sensitivity 2048
TC
– The TC register range is from 0 up to 1023.
– The register value is calculated by:
TC = GROUP 256 + TCValue 8 + TCSQValue
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MODE
– The register range is from 0 up to 1023 and contains the settings for FILTER, RANGE,
OUTPUTMODE:
MODE = RANGE Mode 9 512 +
OUTPUTMODE 32 +
FILTER 8 + RANGE Mode 2:1 2
D/A-READOUT
– This register is read only.
– The register range is from 0 up to 16383.
DEACTIVATE
– This register can only be written.
– The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation.
– The sensor can be reset with an Activate pulse on the output pin or by switching off
and on the supply voltage.
Table 6–3: Available register addresses
Register
Code
Data
Bits
Format
Customer
Remark
CLAMP-LOW
1
8
binary
read/write/
program
Low clamping voltage
CLAMP-HIGH
2
9
binary
read/write/
program
High clamping voltage
VOQ
3
11
two’s compl.
binary
read/write/
program
Output quiescent voltage
SENSITIVITY
4
14
signed binary
read/write/
program
MODE
5
10
binary
read/write/
program
Range, filter, output
mode
LOCKR
6
2
binary
read/write/
program
Lock Bit
A/D READOUT
7
14
two’s compl.
binary
read
GP REGISTERS
1...3
8
3x13
binary
read/write/
program
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DATA SHEET
Table 6–3: Available register addresses, continued
Register
Code
Data
Bits
Format
Customer
Remark
D/A-READOUT
9
14
binary
read
Bit sequence is
reversed during read
TC
11
10
binary
read/write/
program
bits 0 to 2 TCSQ
bits 3 to 7 TC
bits 8 to 9 TC Range
GP REGISTER 0
12
13
binary
read/write/
program
1)
DEACTIVATE
15
12
binary
write
Deactivate the sensor
1)
To read/write this register it is mandatory to read/write all GP register one after the other starting
with GP0. In case of a writing the registers it is necessary to first write all registers followed by one
store sequence at the end. Even if only GP0 should be changed all other GP registers must first
be read and the read out data must be written again to these registers.
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HAL 83xP
DATA SHEET
6.6. Programming Information
Table 6–4: Data formats
Char
DAT3
DAT2
DAT1
DAT0
Bit
1
5
1
4
13
1
2
1
1
1
0
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
CLAMP
LOW
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CLAMP
HIGH
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
VOQ
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
SENSITIVITY
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MODE
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A/DREADOUT
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
LOCKR
Write
Read
V
V
GP 1...3
Registers
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D/AREADOUT1)
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
TC
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
GP 0
Register
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DEACTIVATE
Write
1
0
0
0
0
0
0
0
1
1
1
1
Register
V: valid, : ignore, bit order: MSB first
1) LSB first
If the content of any register (except the lock registers) is to be changed, the desired
value must first be written into the corresponding RAM register. Before reading out the
RAM register again, the register value must be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and
PROM commands must be zero. ERASE and PROM act on all registers in parallel.
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HAL 83xP
DATA SHEET
If all HAL 83xP registers are to be changed, all writing commands can be sent one after
the other, followed by sending one ERASE and PROM command at the end.
During all communication sequences, the customer has to check if the communication with
the sensor was successful. This means that the acknowledge and the parity bits sent by
the sensor have to be checked by the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent from the programmer board.
Note
For production and qualification tests it is mandatory to set the LOCK bit after
final adjustment and programming of HAL 83xP. The LOCK function is active
after the next power-up of the sensor.
The success of the lock process must be checked by reading at least one sensor
register after locking and/or by an analog check of the sensors output signal.
Electrostatic discharges (ESD) may disturb the programming pulses. Please
take precautions against ESD.
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HAL 83xP
DATA SHEET
7. Document History
1. Data Sheet: “HAL 83xP Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
May 12, 2021, DSH000214_001EN. First release of the data sheet.
TDK-Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 www.micronas.tdk.com
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