106C025-20-W-AG

SB157/106C025-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. Data Sheet Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM) Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al (Suffix Al). Anode Cathode Ti-Ni-Ag Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage @ IF = 20A (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current @ VR = 25V (2) Reverse Leakage Current @ VR = 25V, 125OC (2) ESD Machine Model (MM) Junction Operating Temperature Range (2) Storage Temperature Range (2) Symbol Unit VRRM VF IF(AV) IR(1) IR(2) VESD(mm) TJ TSG Volt Volt Amp SB157/106C025-20-W-Ag/Al (See ordering code below) 25 0.39 20 10 400 >1000 -45 to +125 -45 to +125 e.g. mA mA Volt C C (1) Pulse Width tp = < 300µS, Duty Cycle