138P125-W-AG

SB106/138P125-W-Ag/Al Schottky Barrier Diode Wafer 106x138 Mils, 125 Volt, 15 Amp Data Sheet Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Current @ 125 C (2) Junction Operating Temperature Range (2) Storage Temperature Range (2) Symbol Unit VRRM VF IF(AV) IR IR TJ TSG Volt Volt Amp SB106/138P125-W-Ag/Al (See ordering code below) 125 0.80 15 10 5 -65 to +150 -65 to +150 µA mA C C (1) Pulse Width tp = < 300µS, Duty Cycle