1N4150

Transys Electronics LIMITED HIGH SPEED SILICON SWITCHING DIODE 1N4150 DO-35 Glass Axial Package FEATURES General Purpose used in Computer and Industrial Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VR Reverse Voltage (Continuous) IF Forward Current (DC) IFRM Repetitive Peak Forward Current tp=1µ s Non Repetitive Peak Surge Current IFSM tp=1s Power Dissipation @ Ta=25oC Derating Factor Operating And Storage Junction Temperature Range PTA Tj, Tstg o VALUE 50 300 600 4000 500 500 2.85 -65 to +200 UNIT V mA mA mA mW mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Forward Voltage SYMBOL VF TEST CONDITIONS IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA VR=50V VR=50V, Tj=150oC VR=0, f=1MHz IF=10mA to 200mA to IR=10mA to 200mA RL=100Ω Measured @ IR=0.1xIF IF=200mA to 400mA to IR=200mA to 400mA RL=100Ω Measured @ IR=0.1xIF IF=10mA to IR=1mA RL=100Ω Measured @ IR=0.1mA Switched from I=0 to IF=200mA tr=0.4ns, tp=100ns, Duty Cycle