1N5817

1N5817, 1N5819 FEATURES SCHOTTKY DIODE SOT-23-3L 1. ANODE 3.CATHODE 1. 02 Power dissipation PD : 300 mW(Tamb=25℃) 0. 0. 95¡ À 025 2. 80¡ À 05 0. 1. 60¡ À0. 05 Collector current A IF : 1 Collector-base voltage V VR : 1N5817: 20 1N5819: 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ — 1N5817 1N5819 + Marking:SJ Marking:SL ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol V(BR) 1N5817 1N5819 IR 1N5817 1N5819 1N5817 1N5819 CD Test conditions IR= 1mA VR=20V VR=40V IF=1A* IF=1A* IF=3A* IF=3A* MIN 20 40 MAX UNIT V Reverse voltage leakage current 1 0.45 0.6 0.75 0.9 120 0. 35 mA Forward voltage VF V Diode capacitance VR=0V f=1MHz pF 2. 92¡ À0. 05 1. 9