1SS181

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS181 FEATURES Power dissipation PD : 150 mW(Tamb=25℃) 1. 0 2. 4 1. 3 SWITCHING DIODE SOT-23 TJ,Tstg: -55℃ to +150℃ 0. 95 Unit: mm M ki ng A3 ar ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Diode voltage capacitance leakage current Symbol V(BR) IR VF CD t rr unless otherwise specified) Test conditions IR= 100µA VR=80V IF=100mA VR=0V f=1MHz MIN 80 0.5 1.2 4 4 MAX UNIT V 0. 4 Forward Current 100 m A IF : Reverse Voltage 80 V VR: Operating and storage junction temperature range 2. 9 1. 9 0. 95 µA V pF nS Reverse recovery time