2N3055

Transys Electronics LIMITED SILICON PLANAR POWER TRANSISTORS 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage(RBE=100Ω) Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 1.52 ºC/W SYMBOL VCBO VCEO VCER VEBO IC IB Ptot Tj, Tstg VALUE 100 60 70 7 15 7 115 0.657 - 65 to +200 UNITS V V V V A A W W/ºC ºC ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Cut Off Current SYMBOL VCEO(sus)* VCER(sus)* ICEX TEST CONDITION IC=200mA, IB=0 IC=200mA, RBE=100Ω VCE=100V, VBE=(off)=1.5V Tc=150ºC VCE=100V, VBE=(off)=1.5V VCE=30V, IB=0 VBE=7V, IC=0 IC=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V IC=4A, VCE=4V IC=10A, VCE=4V MIN 60 70 MAX UNITS V V mA 1.0 Collector Cut Off Current Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter on Voltage DC Current Gain ICEO IEBO VCE(Sat) * VBE(on) * hFE* 20 5 5.0 0.7 5.0 1.1 3.0 1.5 70 mA mA V V SILICON PLANAR POWER TRANSISTOR 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) Second Breakdown DESCRIPTION Second Breakdown Collector Current with Base Forward Biased Dynamic Characteristics Current Gain - Bandwidth Product Small Signal Current Gain Small Signal Current Gain Cutoff Frequency SYMBOL IS/b TEST CONDITION VCE=40V,t=1.0 s,Nonrepetitive MIN 2.87 MAX UNITS A fT hfe f hfe IC=0.5A, VCE=10V, f=1MHz IC=1A, VCE=4V, f=1KHz IC=1A, VCE=4V, f=1KHz 2.5 15 10 MHz 120 KHz *Pulse Test: Pulse Width