2N3439

Transys Electronics LIMITED NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipation@ Tc=25 degC 28.6 Derate Above 25 deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-a) 175 Junction to Ambient Rth(j-c) 35 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO(sus)* IC=50mA,IB=0 Collector -Emitter Voltage ICBO VCB=360V, IE=0 Collector-Cut off Current VCB=250V, IE=0 ICEO VCE=300V, IB=0 VCE=200V, IB=0 ICEX VCE=450V,VBE=1.5V VCE=300V,VBE=1.5V IEBO VEB=6V, IC=0 Emitter-Cut off Current hFE* IC=2mA,VCE=10V DC Current Gain IC=20mA,VCE=10V IC=50mA,IB=4mA Collector Emitter Saturation Voltage VCE(Sat)* VBE(Sat) * IC=50mA,IB=4mA Base Emitter Saturation Voltage 2N3440 250 300 UNITS V V V A A W mW/deg C W mW/deg C deg C deg C/W deg C/W 2N3439 >350