2N3772

Transys Electronics LIMITED NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 0.170 ºC/W SYMBOL VCBO VCEO VCEX VEBO IC IB PD Tj, Tstg VALUE 100 60 80 7 20 30 5 15 150 0.855 - 65 to +200 UNITS V V V V A A W W/ºC ºC ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Cut Off Current Collector Cut Off Current SYMBOL VCEO (sus)* VCEX (sus) VCER (sus) ICEO ICEV TEST CONDITION IC=0.2A, IB=0 IC=0.2A, RBE=100Ω,VEB=(off)=1.5V IC=0.2A, RBE=100Ω, VCE=50V, IB=0 VCE=100V, VEB(off)=1.5V Tc=150ºC VCE=45V, VEB(off)=1.5V VCB=100V, IE=0 VBE=7V, IC=0 IC=10A, VCE=4V IC=20A, VCE=4V IC=10A, IB=1A IC=20A, IB=4A IC=10A, VCE=4V MIN 60 80 70 MAX UNITS V V V mA mA 10 5.0 Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage ICBO IEBO hFE* VCE(sat) VBE(on) 15 5 10 5.0 5.0 60 1.4 4.0 2.2 mA mA V V NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) Second Breakdown DESCRIPTION Second Breakdown Energy with Base Forward Biased Dynamic Characteristics Current Gain - Bandwidth Product Small Signal Current Gain SYMBOL IS/b TEST CONDITION VCE=60V,t=1.0 s,Nonrepetitive MIN 2.5 MAX UNITS A fT hfe IC=1.0A, VCE=4V, f=50KHz IC=1A, VCE=4V, f=1KHz 0.2 40 MHz *Pulse Test: Pulse Width