2N5172

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N5172 FEATURES Power dissipation TRANSISTOR (NPN) TO—92 1. EMITTER PCM : 0.625 W (Tamb=25℃) Collector current A ICM : 0.5 Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Test conditions MIN 25 25 5 TYP MAX UNIT V V V Ic= 10µA, IE=0 Ic= 10 mA, IB=0 IE= 10µA, IC=0 VCB= 25V, IE=0 VEB= 5 V, IC=0 VCE= 10V, IC= 10mA IC=10mA, IB=1mA IC=10mA, IB=1mA 0.1 0.1 100 500 0.25 1.2 µA µA V V