2N5401

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N5401 FEATURE Power dissipation TRANSISTOR (PNP) TO-92 PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) 2. BASE 3. COLLECTOR 123 unless otherwise specified) Test conditions MIN -160 -150 -5 -0.1 -0.1 80 80 50 -0.5 -1 V V 250 TYP MAX UNIT V V V Ic= -100 µA, IE=0 Ic= -1 mA, IB=0 IE= -10 µA, IC=0 VCB= -120 V, IE=0 VEB= -4 V, IC=0 VCE= -5 V, IC=-1 mA VCE= -5 V, IC= -10 mA VCE= -5 V, IC=-50 mA IC= -50 mA, IB= -5 mA IC= -50 mA, IB= -5 mA VCE=-5V, IC=-10mA µA µA Transition frequency fT f =30MHz 100 MHz CLASSIFICATION OF hFE(2) Rank Range A 80-160 B 120-180 C 150-250