2N6520

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N6520 FEATURES Power dissipation TRANSISTOR (PNP) TO-92 1. EMITTER PCM : 0.625 W (Tamb=25℃) 2. BASE Collector current ICM : -0.5 A Collector-base voltage V V(BR)CBO : -350 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO * unless otherwise specified) Test conditions MIN -350 -350 -5 -0.05 -0.05 20 30 30 20 15 TYP MAX UNIT V V V µA µA Ic= -100 µA , IE=0 IC= -1 mA , IB=0 IE= -10 µA, IC=0 VCB= -250 V , IE=0 VEB= -4 V , IC=0 VCE=-10 V, IC= -1 mA VCE=-10 V, IC= -10 mA VCE=-10 V, IC= -30 mA VCE=-10 V, IC= -50 mA VCE=-10 V, IC= -100 mA IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA IC= -50 mA, IB= -5 mA IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA VCE=-10V, IC= -100 mA VCE=-20 V, IC= -10 mA f =20 MHz V(BR)EBO ICBO IEBO DC current gain hFE 200 200 -0.3 -0.35 -0.5 -1 -0.75 -0.85 -0.9 -2 Collector-emitter saturation voltage VCE(sat) V Base-emitter saturation voltage Base-emitter voltage Transition frequency VBE(sat) VBE(on) V V MHz fT * 40 200 * Pulse test, Pulse width≤300µs, Duty cycle≤2%.