2N6727

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N6727 FEATURES Power dissipation PCM : 1 TRANSISTOR (PNP) TO-92 1. EMITTER W (Tamb=25℃) 2. BASE Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(on) unless otherwise specified) Test conditions MIN -50 -40 -5 -0.1 -1 -0.1 50 55 60 -0.5 -1.2 50 V V MHz 250 TYP MAX UNIT V V V µA µA µA Ic= -1 mA, IE=0 IC= -10 mA , IB=0 IE= -1 mA, IC=0 VCB= -50 V, IE=0 VCB= -40 V, IB=0 VEB= -5 V, IC=0 VCE=-1 V, IC= -1 A VCE=-1 V, IC= -10 mA VCE=-1 V, IC= -100 mA IC= -1 A, IB= -100 mA VCE= -1 V, IC= -1 A VCE=-10 V , IC= -50 mA Transition frequency fT