2N7002DW

Transys Electronics LIMITED SOT-363 Plastic-Encapsulated Transistors 2N7002DW FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MOSFET (N-Channel) ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Test conditions MIN 60 1 TYP 70 1.5 2 ±10 1 500 500 1000 3.2 4.4 80 22 11 f=1 MHz VDD=30 V, RL=150 Ω 2 50 25 5 pF 7.5 13.5 MAX UNIT V nA µA mA Ω ms Symbol V(BR)DSS Vth(GS) lGSS IDSS ID(ON) rDS(0n) * gFS Ciss Coss CrSS Drain-Source Breakdown Voltage * Gate-Threshold Voltage* Gate-body Leakage* Zero Gate Voltage Drain Current * On-state Drain Current * Drain-Source On-Resistance * Forward Tran conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0 V, ID=10 µA VDS=VGS, ID=250 µA VDS=0 V, VGS=±20 V VDS=60 V, VGS=0 V VDS=60V,VGS=0V,Tj=125 VGS=10 V, VDS=7.5 V VGS=5 V, ID=50 mA VGS=10 V, ID=500 mA VDS=10 V, ID=200 mA VDS=25 V, VGS=0 V SWITCHING Turn-on Time Turn-off Time td(0n) td(off) 7 11 20 20 ns ID=200 mA, VGEN=10 V RG=25 Ω * Pulse test , pulse width≤300µs, duty cycle≤2% . Marking: K72