2N7002T

Transys Electronics LIMITED SOT-523 2N7002T FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) MOSFET Plastic-Encapsulated Transistors SOT-523 ( N-Channel ) 1. GATE 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ Marking: 72 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Gate-body Leakage* * Symbol V(BR)DSS Vth(GS) lGSS IDSS ID(ON) RDS(0n) * gFS CiSS COSS CrSS f=1MHz unless Test otherwise specified) MIN 60 1 2 ±10 1 µA 500 500 1000 3.2 4.4 80 22 11 2 50 25 5 pF 7.5 13.5 mA Ω ms TYP MAX UNIT V nA conditions VGS=0V,ID=10µA VDS=VGS, ID=250µA VDS=0V, VGS=±20V VDS=60V, VGS=0V Zero Gate Voltage Drain Current * VDS=60V,VGS=0V,Tj=125℃ VGS=10V, VDS=7.5V VGS=5V, ID=50mA VGS=10V, ID=500mA VDS=10V, ID=200mA VDS=25V, VGS=0V On-state Drain Current * Drain-Source On-Resistance * Forward Tran conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-on Time Turn-off Time TD(ON) TD(OFF) VDD=30V,RL=150 ID=200mA,VGEN=10V RGEN=25Ω 7 11 20 20 ns * Pulse test. Typical Characteristics 2N7002T