Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Transistors
2SA1037
FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃)
2. 9 1. 9 0. 95
TRANSISTOR (PNP)
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
1. 0
2. 4 1. 3
Collector current A ICM : -0.15 Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)
unless otherwise specified)
Test conditions MIN -60 -50 -6 -0.1 -0.1 120 560 -0.5 120 V MHz TYP MAX UNIT V V V
Ic=-50µA, IE=0 Ic= -1mA, IB=0 IE= -50µA, IC=0 VCB=- 60 V , IE=0 VEB= -6V , IC=0
0. 4
µA µA
VCE=-6V, IC= -1mA IC=-50 mA, IB= -5mA VCE=-12V, IC= -2mA f =30MHz
fT
CLASSIFICATION OF hFE Rank Range Marking Q 120-270 FQ R 180-390 FR S 270-560 FS
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