2SA1213

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SA1213 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 SOT-89 W (Tamb=25℃) A V 1. BASE 1 2. COLLECTOR 2 3. EMITTER 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current unless otherwise specified) Test conditions MIN -50 -50 -5 -0.1 -0.1 70 20 -0.5 -1.2 V V 240 MAX UNIT V V V µA µA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE 1 Ic=-100µA , IE=0 IC= -10mA , IB=0 IE=-100µA, IC=0 VCB=-50 V , IE=0 VEB=-5 V , IC=0 VCE=-2V, IC= -0.5A VCE=-2V, IC= -2A IC=-1A, IB= -0.05A IC=-1A, IB= -0.05A DC current gain hFE 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCEsat VBEsat Transition frequency fT VCE= -2V, IC=-0.5A 100 MHz CLASSIFICATION OF hFE Rank Range O 70-140 Y 120-240 Marking NO,NY