2SA1296

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA1296 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) TRANSISTOR (PNP) TO-92 1. EMITTER 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-0.1mA, IE=0 Ic=-10mA, IB=0 IE=-0.1m A, IC=0 VCB=-20V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-0.1A VCE=-2V, IC=-2A IC=-2A, IB=-0.1A VCE=-2V, IC=-0.1A VCE=-2V, IC=-0.5A VCB=-10V, IE=0,f=1MHz -20 -20 -6 -0.1 -0.1 120 40 -0.5 -0.85 120 40 400 µA µA V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Y 120-240 GR 200-400