2SA1611

Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF : 0.15 W (Tamb=25℃) 2. 30¡ À0. 05 Collector current : -0.1 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=-60V,IE=0 VEB=-5V,IC=0 VCE=-6V, IC=-1mA IC=-100mA, IB=-10mA VCE=-6V, IC=-1mA VCE=-6V, IC=-10mA VCB=-10V, IE=0, f=1MHz -60 -50 -5 -0.1 -0.1 90 600 -0.3 -0.58 -0.68 0. 30 2. 00¡ À0. 05 µA µA V V MHz pF fT Cob 180 4.5 CLASSIFICATION OF hFE(1) Rank Range Marking M4 90-180 M4 M5 135-270 M5 M6 200-400 M6 M7 300-600 M7 Typical Characteristics 2SA1611