2SA1700

Transys Electronics LIMITED TO-251 Plastic-Encapsulated Transistors 2SA1700 FEATURES Power dissipation PCM :1 W (Tamb=25℃) TRANSISTOR (NPN) TO-251 1. BASE 2. COLLECTOR 3. EMITTER Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10µA, IE=0 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-300V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE=-30V, IC=-10mA -400 -400 -5 -0.1 -0.1 60 200 -0.6 -1 70 µA µA V V MHz fT CLASSIFICATION OF hFE(1) Rank Range D 60-120 E 100-200