Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Transistors
SOT-523
2SA1774
FEATURES Power dissipation PCM
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
: 0.15
W (Tamb=25℃)
Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat)
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-50µA, IE=0 Ic=-1mA, IB=0 IE=-50µA, IC=0 VCB=-60V, IE=0 VEB=-6V, IC=0 VCE=-6V, IC=-1mA IC=-50mA, IB=-5mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, IE=0, f=1MHz
-60 -50 -7 -0.1 -0.1 120 560 -0.5 140
5
µA µA
V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 FQ R 180-390 FR S 270-560 FS
Typical Characteristics
2SA1774
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