2SA562

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA562 FEATURE Power dissipation PCM : 0.5 TRANSISTOR (PNP) TO-92 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: TJ : -55℃ to +150℃ 150℃ 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) unless otherwise specified) Test conditions MIN -35 -30 -5 -0.1 -0.1 70 240 -0.25 -1 V V TYP MAX UNIT V V V µA µA Ic= -100µA , IE=0 IC= -1mA , IB=0 IE= -100µA, IC=0 VCB=-35V , IE=0 VEB= -5V , IC=0 VCE=-1 V, IC=-100mA IC= -100mA, IB= -10 mA VCE=- 1V, IC=-100 mA VCE= -6 V, IC= -20mA Transition frequency fT F=30MHz 200 MHz CLASSIFICATION OF hFE Rank Range O Y 120-240 hFE(1) 70-140