2SA608S

Transys Electronics LIMITED TO-92S Plastic-Encapsulated Transistors 2SA608S FEATURES 1. EMITTER TRANSISTOR (PNP) TO-92S Power dissipation PCM : 300 mW (Tamb=25℃) 2. COLLECTOR 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob unless otherwise specified) Test conditions MIN -40 -30 -5 -1 -1 60 560 -0.5 180 7 V MHz pF TYP MAX UNIT Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=-25V, IE=0 VEB=-4V, IC=0 VCE=-6V, IC=-1mA IC=-50mA, IB=-5mA VCE=-6V, IC=-10mA VCB=-6V, f=1MHz V V V µA µA CLASSIFICATION OF hFE Rank Range D 60-120 E 100-200 F 160-320 G 280-560