2SA673

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA673 FEATURE Power dissipation PCM : 0.4 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TRANSISTOR (PNP) TO-92 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1)* DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCEsat * VBE unless otherwise specified) Test conditions MIN -35 -35 -4 -0.5 60 10 -0.6 -0.75 V V 320 TYP MAX UNIT V V V µA Ic= -10µA , IE=0 IC=-1 mA , IB=0 IE=-10µA, IC=0 VCB= -20 V , IE=0 VCE=-3V, IC= -10mA VCE=-3 V, IC=-500mA IC= -150mA, IB=-15mA VCE=-3 V, IC=-10mA *Measured using pulse CLASSIFICATION OF hFE(1) Rank Range B 60-120 C 100-200 D 160-320