2SA812

Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SA812 FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 0. 0. 95¡ À 025 2. 80¡ À 05 0. 1. 60¡ À0. 05 Collector current A ICM : -0.1 Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE unless otherwise specified) Test conditions MIN -60 -50 -5 -0.1 -0.1 90 600 -0.3 -0.68 180 V V MHz TYP MAX UNIT V V V Ic=-100µA, IE=0 Ic= -1mA, IB=0 IE= -100µA, IC=0 VCB=- 60 V , IE=0 VEB= -5V , IC=0 0. 35 2. 92¡ À0. 05 1. 9 µA µA VCE=- 6V, IC= -1mA IC=-100 mA, IB= -10mA IC=-1mA, VCE=-6V VCE=-6V, IC= -10mA fT CLASSIFICATION OF hFE Marking Range M4 90-180 M5 135-270 M6 200-400 M7 300-600