2SA821

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA821 FEATURES Power dissipation TRANSISTOR (PNP) TO-92 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR 3. BASE Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless otherwise specified) Test conditions MIN -210 -210 -5 -1 -1 56 270 -0.6 30 V MHz TYP MAX UNIT V V V µA µA Ic= -50µA , IE=0 IC= -0.1 mA , IB=0 IE= -50µA, IC=0 VCB=-150V, IE=0 VEB= -4.5 V , IC=0 VCE=-3 V, IC= -5mA IC= -2mA, IB= -0.2mA VCE=-5V, IC= -2mA fT Cob Output capacitance VCE=-10V,IE=0,f=1MHz 12 pF CLASSIFICATION OF hFE Rank Range N 56-120 P 82-180 Q 120-270