2SA836

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA836 FEATURES TRANSISTOR (PNP) TO-92 Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR 3. BASE Collector current A ICM: -0.1 Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat VBE(ON) Test conditions MIN -55 -55 -5 -0.1 -0.05 160 500 -0.5 -0.75 150 V V MHz TYP MAX UNIT V V V µA µA Ic= -10µA , IE=0 IC= -1 mA , IB=0 IE= -10µA, IC=0 VCB=-18V, IE=0 VEB= -2V , IC=0 VCE=-12 V, IC= -2mA IC= -10mA, IB= -1mA VCE=-12 V, IC= -2mA VCE=-12 V, IC= -2mA fT Cob Output capacitance VCE=-10V, IE=0,f=1 MHz VCE=-6V, IC=0.1 mA, f=1 0Hz, RG=10KΩ VCE=-6V, IC=0.1 mA, f=1 kHz, RG=10KΩ 4 5 pF Noise figure NF dB 1 CLASSIFICATION OF hFE Rank Range C 160-320 D 250-500