2SA844

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA844 FEATURES Power dissipation TRANSISTOR (PNP) TO-92 1. EMITTER PCM : 0.3 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -55 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) Test conditions MIN -55 -55 -5 -0.1 -0.05 160 800 -0.5 -0.75 150 V V MHz TYP MAX UNIT V V V µA µA Ic= -10µA , IE=0 IC= -1mA , IB=0 IE= -10µA, IC=0 VCB= -18V , IE=0 VEB= -2 V , IC=0 VCE=-12V, IC= -2mA IC= -10mA, IB= -1 mA VCE= -12V, IC= -2mA VCE=-12V, IC= -2mA Transition frequency fT CLASSIFICATION OF hFE Rank Range C 160-320 D 250-500 E 400-800